All MOSFET. IXFN420N10T Equivalents Search

 

IXFN420N10T Spec and Replacement


   Type Designator: IXFN420N10T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1070 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 420 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 670 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
   Package: TO227

 IXFN420N10T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFN420N10T Specs

 ..1. Size:179K  ixys
 ixfn420n10t.pdf pdf_icon

IXFN420N10T

Advance Technical Information GigaMOSTM Trench VDSS = 100V IXFN420N10T HiperFETTM ID25 = 420A RDS(on) 2.3m Power MOSFET trr 140ns N-Channel Enhancement Mode Avalanche Rated miniBLOC, SOT-227 E153432 Fast Intrinsic Diode S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 ... See More ⇒

 9.1. Size:162K  ixys
 ixfn44n50 ixfk44n50 ixfn48n50 ixfk48n50.pdf pdf_icon

IXFN420N10T

VDSS ID25 RDS(on) HiPerFETTM IXFK / IXFN 44 N50 500 V 44 A 0.12 Power MOSFETs IXFK / IXFN 48 N50 500 V 48 A 0.10 trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA Symbol Test Conditions Maximum Ratings (IXFK) IXFK IXFN VDSS TJ = 25 C to 150 C 500 500 V VDGR TJ = 25 C ... See More ⇒

 9.2. Size:84K  ixys
 ixfn48n60p.pdf pdf_icon

IXFN420N10T

IXFN 48N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 40 A Power MOSFET RDS(on) 140 m N-Channel Enhancement Mode trr 200 ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V miniBLOC, SOT-227 B (IXFN) VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V E153432 S VGSS Cont... See More ⇒

 9.3. Size:128K  ixys
 ixfn44n60.pdf pdf_icon

IXFN420N10T

HiPerFETTM IXFN 44N60 VDSS = 600 V Power MOSFETs ID25 = 44 A Single Die MOSFET RDS(on) = 130 mW D trr 250 ns N-Channel Enhancement Mode G Avalanche Rated, High dv/dt, Low trr S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B E153432 VDSS TJ = 25 C to 150 C 600 V S VDGR TJ = 25 C to 150 C; RGS = 1 MW 600 V G VGS Continuous 20 V VGSM Transient 30 V S I... See More ⇒

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Detailed specifications: IXFN360N10T , IXFN360N15T2 , IXFN36N110P , IXFN38N100P , IXFN38N100Q2 , IXFN38N80Q2 , IXFN40N110P , IXFN40N90P , IRF540N , IXFN44N100P , IXFN44N100Q3 , IXFN44N50Q , IXFN44N80P , IXFN44N80Q3 , IXFN48N50Q , IXFN48N50U2 , IXFN48N55 .

History: DSE108N20NA

Keywords - IXFN420N10T MOSFET specs

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