IXFX120N30T Todos los transistores

 

IXFX120N30T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXFX120N30T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 960 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 300 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
   Paquete / Cubierta: PLUS247
 

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IXFX120N30T Datasheet (PDF)

 ..1. Size:139K  ixys
 ixfk120n30t ixfx120n30t.pdf pdf_icon

IXFX120N30T

Advance Technical InformationGigaMOSTM VDSS = 300VIXFK120N30TID25 = 120APower MOSFETIXFX120N30T RDS(on) 24m trr 200nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-264 (IXFK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 VGDVDGR TJ = 25C to 150C, RGS = 1M

 4.1. Size:131K  ixys
 ixfk120n30p3 ixfx120n30p3.pdf pdf_icon

IXFX120N30T

Advance Technical InformationPolar3TM HiPerFETTM VDSS = 300VIXFK120N30P3Power MOSFETs ID25 = 120AIXFX120N30P3 RDS(on) 27m trr 250nsN-Channel Enhancement ModeAvalanche RatedTO-264 (IXFK)Fast Intrinsic DiodeGDSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 300 V TabVDGR TJ = 25C to 150

 6.1. Size:159K  ixys
 ixfk120n65x2 ixfx120n65x2.pdf pdf_icon

IXFX120N30T

Advance Technical InformationX2-Class HiPerFETTM VDSS = 650VIXFK120N65X2Power MOSFET ID25 = 120AIXFX120N65X2 RDS(on) 24m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-264P (IXFK)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 650 VDTabVDGR TJ = 25C to 150C, RGS = 1M 650 V SVGSS

 6.2. Size:123K  ixys
 ixfk120n25p ixfx120n25p.pdf pdf_icon

IXFX120N30T

VDSS = 250 VIXFK 120N25PPolarHTTM HiPerFETID25 = 120 AIXFX 120N25PPower MOSFET RDS(on) 24 m N-Channel Enhancement Mode trr 200 ns Fast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 250 VTO-264 (IXFK)VDGR TJ = 25C to 175C; RGS = 1 M 250 VVGS Continuous

MOSTRAR MÁS

Otros transistores... IXFV52N30PS , IXFV74N20P , IXFV74N20PS , IXFV96N15P , IXFV96N15PS , IXFV96N20P , IXFX120N25 , IXFX120N25P , 5N60 , IXFX140N25T , IXFX140N30P , IXFX160N30T , IXFX170N20P , IXFX170N20T , IXFX180N15P , IXFX180N25T , IXFX200N10P .

History: HGK105N15M | DAMH160N200 | CS4N65A3HD | MSK7804 | HY150N075T | MTN7N65FP | VS6614DS

 

 
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