All MOSFET. IXFX120N30T Equivalents Search

 

IXFX120N30T Spec and Replacement


   Type Designator: IXFX120N30T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 960 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: PLUS247

 IXFX120N30T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFX120N30T Specs

 ..1. Size:139K  ixys
 ixfk120n30t ixfx120n30t.pdf pdf_icon

IXFX120N30T

Advance Technical Information GigaMOSTM VDSS = 300V IXFK120N30T ID25 = 120A Power MOSFET IXFX120N30T RDS(on) 24m trr 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 300 V G D VDGR TJ = 25 C to 150 C, RGS = 1M ... See More ⇒

 4.1. Size:131K  ixys
 ixfk120n30p3 ixfx120n30p3.pdf pdf_icon

IXFX120N30T

Advance Technical Information Polar3TM HiPerFETTM VDSS = 300V IXFK120N30P3 Power MOSFETs ID25 = 120A IXFX120N30P3 RDS(on) 27m trr 250ns N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode G D Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 300 V Tab VDGR TJ = 25 C to 150 ... See More ⇒

 6.1. Size:159K  ixys
 ixfk120n65x2 ixfx120n65x2.pdf pdf_icon

IXFX120N30T

Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFK120N65X2 Power MOSFET ID25 = 120A IXFX120N65X2 RDS(on) 24m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264P (IXFK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 650 V D Tab VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S VGSS... See More ⇒

 6.2. Size:123K  ixys
 ixfk120n25p ixfx120n25p.pdf pdf_icon

IXFX120N30T

VDSS = 250 V IXFK 120N25P PolarHTTM HiPerFET ID25 = 120 A IXFX 120N25P Power MOSFET RDS(on) 24 m N-Channel Enhancement Mode trr 200 ns Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 250 V TO-264 (IXFK) VDGR TJ = 25 C to 175 C; RGS = 1 M 250 V VGS Continuous... See More ⇒

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Detailed specifications: IXFV52N30PS , IXFV74N20P , IXFV74N20PS , IXFV96N15P , IXFV96N15PS , IXFV96N20P , IXFX120N25 , IXFX120N25P , IRLB4132 , IXFX140N25T , IXFX140N30P , IXFX160N30T , IXFX170N20P , IXFX170N20T , IXFX180N15P , IXFX180N25T , IXFX200N10P .

Keywords - IXFX120N30T MOSFET specs

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