IXTA75N10P Todos los transistores

 

IXTA75N10P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTA75N10P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 360 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 120 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: TO263
 

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IXTA75N10P Datasheet (PDF)

 ..1. Size:252K  ixys
 ixta75n10p ixtp75n10p ixtq75n10p.pdf pdf_icon

IXTA75N10P

IXTA 75N10P VDSS = 100 VPolarHTTMIXTP 75N10P ID25 = 75 APower MOSFETIXTQ 75N10P RDS(on) 25 m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)Symbol Test Conditions Maximum RatingsGSVDSS TJ = 25 C to 175 C 100 V(TAB)VDGR TJ = 25 C to 175 C; RGS = 1 M 100 VVGS Continuous 20 VTO-220 (IXTP)VGSM Transient

 ..2. Size:216K  inchange semiconductor
 ixta75n10p.pdf pdf_icon

IXTA75N10P

isc N-Channel MOSFET Transistor IXTA75N10PDESCRIPTIONDrain Current I = 75A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies (SMPS), consumer and industrial lighting,D

 9.1. Size:177K  ixys
 ixta76n075t ixtp76n075t.pdf pdf_icon

IXTA75N10P

Preliminary Technical InformationIXTA76N075T VDSS = 75 VTrenchMVTMIXTP76N075T ID25 = 76 APower MOSFET RDS(on) 12 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C; RGS = 1 M 75 VGVGSM Transient 20 VS(TAB)ID25 TC = 25C76 A

 9.2. Size:182K  ixys
 ixta7n60p ixtp7n60p.pdf pdf_icon

IXTA75N10P

VDSS = 600 VIXTA 7N60PPolarHVTMID25 = 7 AIXTP 7N60PPower MOSFET RDS(on) 1.1 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSS TJ = 25 C to 175 C 600 VVDGR TJ = 25 C to 175 C; RGS = 1 M 600 VVGS Continuous 30 V(TAB)GVGSM Transient 40 VDSID25 TC = 25 C7 A

MOSTRAR MÁS

Otros transistores... IXTA60N10T , IXTA60N20T , IXTA62N15P , IXTA6N100D2 , IXTA6N50D2 , IXTA6N50P , IXTA70N075T2 , IXTA70N085T , 4435 , IXTA76N075T , IXTA76N25T , IXTA76P10T , IXTA7N60P , IXTA80N10T , IXTA80N10T7 , IXTA80N12T2 , IXTA86N20T .

History: NTJS4405NT1 | AOB409L | NCE85H21C | HTD2K4P15T | SHD225628 | HM1607D

 

 
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