IXTA75N10P Datasheet. Specs and Replacement

Type Designator: IXTA75N10P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 360 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: TO263

IXTA75N10P substitution

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IXTA75N10P datasheet

 ..1. Size:252K  ixys
 ixta75n10p ixtp75n10p ixtq75n10p.pdf pdf_icon

IXTA75N10P

IXTA 75N10P VDSS = 100 V PolarHTTM IXTP 75N10P ID25 = 75 A Power MOSFET IXTQ 75N10P RDS(on) 25 m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G S VDSS TJ = 25 C to 175 C 100 V (TAB) VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGS Continuous 20 V TO-220 (IXTP) VGSM Transient ... See More ⇒

 ..2. Size:216K  inchange semiconductor
 ixta75n10p.pdf pdf_icon

IXTA75N10P

isc N-Channel MOSFET Transistor IXTA75N10P DESCRIPTION Drain Current I = 75A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Designed for high current, high speed switching, switch mode power supplies (SMPS), consumer and industrial lighting, D... See More ⇒

 9.1. Size:177K  ixys
 ixta76n075t ixtp76n075t.pdf pdf_icon

IXTA75N10P

Preliminary Technical Information IXTA76N075T VDSS = 75 V TrenchMVTM IXTP76N075T ID25 = 76 A Power MOSFET RDS(on) 12 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C76 A ... See More ⇒

 9.2. Size:182K  ixys
 ixta7n60p ixtp7n60p.pdf pdf_icon

IXTA75N10P

VDSS = 600 V IXTA 7N60P PolarHVTM ID25 = 7 A IXTP 7N60P Power MOSFET RDS(on) 1.1 N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 175 C 600 V VDGR TJ = 25 C to 175 C; RGS = 1 M 600 V VGS Continuous 30 V (TAB) G VGSM Transient 40 V D S ID25 TC = 25 C7 A... See More ⇒

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Detailed specifications: IXTA60N10T, IXTA60N20T, IXTA62N15P, IXTA6N100D2, IXTA6N50D2, IXTA6N50P, IXTA70N075T2, IXTA70N085T, 5N65, IXTA76N075T, IXTA76N25T, IXTA76P10T, IXTA7N60P, IXTA80N10T, IXTA80N10T7, IXTA80N12T2, IXTA86N20T

Keywords - IXTA75N10P MOSFET specs

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