IXTA75N10P datasheet, подбор замены

 ..1. Size:252K  ixys
 ixta75n10p ixtp75n10p ixtq75n10p.pdf 

IXTA 75N10P VDSS = 100 V PolarHTTM IXTP 75N10P ID25 = 75 A Power MOSFET IXTQ 75N10P RDS(on) 25 m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G S VDSS TJ = 25 C to 175 C 100 V (TAB) VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGS Continuous 20 V TO-220 (IXTP) VGSM Transient

 ..2. Size:216K  inchange semiconductor
 ixta75n10p.pdf 

isc N-Channel MOSFET Transistor IXTA75N10P DESCRIPTION Drain Current I = 75A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Designed for high current, high speed switching, switch mode power supplies (SMPS), consumer and industrial lighting, D

 9.1. Size:177K  ixys
 ixta76n075t ixtp76n075t.pdf 

Preliminary Technical Information IXTA76N075T VDSS = 75 V TrenchMVTM IXTP76N075T ID25 = 76 A Power MOSFET RDS(on) 12 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C76 A

 9.2. Size:182K  ixys
 ixta7n60p ixtp7n60p.pdf 

VDSS = 600 V IXTA 7N60P PolarHVTM ID25 = 7 A IXTP 7N60P Power MOSFET RDS(on) 1.1 N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 175 C 600 V VDGR TJ = 25 C to 175 C; RGS = 1 M 600 V VGS Continuous 30 V (TAB) G VGSM Transient 40 V D S ID25 TC = 25 C7 A

 9.3. Size:175K  ixys
 ixta70n085t ixtp70n085t.pdf 

Preliminary Technical Information IXTA70N085T VDSS = 85 V TrenchMVTM IXTP70N085T ID25 = 70 A Power MOSFET RDS(on) 13.5 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C70 A