IXTC230N085T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXTC230N085T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 160 W
Tensión drenaje-fuente (Vds): 85 V
Corriente continua de drenaje (Id): 120 A
CARACTERÍSTICAS ELÉCTRICAS
Carga de compuerta (Qg): 187 nC
Tiempo de elevación (tr): 90 nS
Resistencia drenaje-fuente RDS(on): 0.0053 Ohm
Empaquetado / Estuche: ISOPLUS220
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IXTC230N085T Datasheet (PDF)
5.1. ixtc280n055t.pdf 
Size:186K _ixys
Preliminary Technical Information IXTC280N055T VDSS = 55 V TrenchMVTM ID25 = 145 A Power MOSFET ? ? RDS(on) ? 3.6 m? ? ? ? ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220 (IXTC) E153432 VDSS TJ = 25C to 175C55 V VDGR TJ = 25C to 175C; RGS = 1 M? 55 V VGSM Transient 20 V ID25 TC = 25C 1
5.2. ixtc26n50p.pdf Size:175K _ixys
IXTC 26N50P VDSS = 500 V PolarHVTM ID25 = 15 A Power MOSFET ? ? RDS(on) ? 260 m? ? ? ? ? ? ? ISOPLUS220TM (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V ISOPLUS220TM (IXTC) E153432 VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V VGS Continuous 30 V VGSM Transient 40 V ID25 TC = 25 C15 A
5.3. ixtc220n055t.pdf Size:187K _ixys
Preliminary Technical Information IXTC220N055T VDSS = 55 V TrenchMVTM ID25 = 130 A Power MOSFET ? ? RDS(on) ? 4.4 m? ? ? ? ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220 (IXTC) E153432 VDSS TJ = 25C to 175C55 V VDGR TJ = 25C to 175C; RGS = 1 M? 55 V VGSM Transient 20 V ID25 TC = 25C 1
5.4. ixtc220n075t.pdf Size:186K _ixys
Preliminary Technical Information IXTC220N075T VDSS = 75 V TrenchMVTM ID25 = 115 A Power MOSFET ? ? RDS(on) ? 5.0 m? ? ? ? ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220 (IXTC) E153432 VDSS TJ = 25C to 175C75 V VDGR TJ = 25C to 175C; RGS = 1 M? 75 V VGSM Transient 20 V ID25 TC = 25C 1
5.5. ixtc240n055t.pdf Size:187K _ixys
Preliminary Technical Information IXTC240N055T VDSS = 55 V TrenchMVTM ID25 = 132 A Power MOSFET ? ? RDS(on) ? 4.0 m? ? ? ? ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS240 (IXTC) E153432 VDSS TJ = 25C to 175C55 V VDGR TJ = 25C to 175C; RGS = 1 M? 55 V VGSM Transient 20 V ID25 TC = 25C 1
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: NTGD3148NT1G | NTGD3147FT1G | NTF6P02T3G | NTF5P03 | NTF3055L175T1G | NTF3055L108T1G | NTF3055-160T3LF | NTF3055-160T1 | NTF3055-100T1 | NTF2955T1G | NTF2955PT1G | NTDV5804N | NTDV3055L104 | NTDV20P06L | NTDV20N06L |