IXTC230N085T Todos los transistores

 

IXTC230N085T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTC230N085T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 160 W

Tensión drenaje-fuente (Vds): 85 V

Corriente continua de drenaje (Id): 120 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 187 nC

Tiempo de elevación (tr): 90 nS

Resistencia drenaje-fuente RDS(on): 0.0053 Ohm

Empaquetado / Estuche: ISOPLUS220

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IXTC230N085T Datasheet (PDF)

5.1. ixtc280n055t.pdf Size:186K _ixys

IXTC230N085T
IXTC230N085T

Preliminary Technical Information IXTC280N055T VDSS = 55 V TrenchMVTM ID25 = 145 A Power MOSFET ? ? RDS(on) ? 3.6 m? ? ? ? ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220 (IXTC) E153432 VDSS TJ = 25C to 175C55 V VDGR TJ = 25C to 175C; RGS = 1 M? 55 V VGSM Transient 20 V ID25 TC = 25C 1

5.2. ixtc26n50p.pdf Size:175K _ixys

IXTC230N085T
IXTC230N085T

IXTC 26N50P VDSS = 500 V PolarHVTM ID25 = 15 A Power MOSFET ? ? RDS(on) ? 260 m? ? ? ? ? ? ? ISOPLUS220TM (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V ISOPLUS220TM (IXTC) E153432 VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V VGS Continuous 30 V VGSM Transient 40 V ID25 TC = 25 C15 A

 5.3. ixtc220n055t.pdf Size:187K _ixys

IXTC230N085T
IXTC230N085T

Preliminary Technical Information IXTC220N055T VDSS = 55 V TrenchMVTM ID25 = 130 A Power MOSFET ? ? RDS(on) ? 4.4 m? ? ? ? ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220 (IXTC) E153432 VDSS TJ = 25C to 175C55 V VDGR TJ = 25C to 175C; RGS = 1 M? 55 V VGSM Transient 20 V ID25 TC = 25C 1

5.4. ixtc220n075t.pdf Size:186K _ixys

IXTC230N085T
IXTC230N085T

Preliminary Technical Information IXTC220N075T VDSS = 75 V TrenchMVTM ID25 = 115 A Power MOSFET ? ? RDS(on) ? 5.0 m? ? ? ? ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220 (IXTC) E153432 VDSS TJ = 25C to 175C75 V VDGR TJ = 25C to 175C; RGS = 1 M? 75 V VGSM Transient 20 V ID25 TC = 25C 1

 5.5. ixtc240n055t.pdf Size:187K _ixys

IXTC230N085T
IXTC230N085T

Preliminary Technical Information IXTC240N055T VDSS = 55 V TrenchMVTM ID25 = 132 A Power MOSFET ? ? RDS(on) ? 4.0 m? ? ? ? ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS240 (IXTC) E153432 VDSS TJ = 25C to 175C55 V VDGR TJ = 25C to 175C; RGS = 1 M? 55 V VGSM Transient 20 V ID25 TC = 25C 1

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