IXTC230N085T
MOSFET. Datasheet pdf. Equivalent
Type Designator: IXTC230N085T
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 160
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85
V
|Id|ⓘ - Maximum Drain Current: 120
A
Qgⓘ - Total Gate Charge: 187
nC
trⓘ - Rise Time: 90
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0053
Ohm
Package:
ISOPLUS220
IXTC230N085T
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXTC230N085T
Datasheet (PDF)
9.1. Size:175K ixys
ixtc26n50p.pdf 
IXTC 26N50P VDSS = 500 VPolarHVTMID25 = 15 APower MOSFET RDS(on) 260 m ISOPLUS220TM(Electrically Isolated Tab)N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 500 V ISOPLUS220TM (IXTC)E153432VDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGS Continuous 30 VVGSM Transi
9.2. Size:186K ixys
ixtc280n055t.pdf
Preliminary Technical InformationIXTC280N055T VDSS = 55 VTrenchMVTMID25 = 145 APower MOSFET RDS(on) 3.6 m (Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS220 (IXTC)E153432VDSS TJ = 25C to 175C55 VVDGR TJ = 25C to 175C; RGS = 1 M 55 VVGSM Transient
9.3. Size:187K ixys
ixtc220n055t.pdf
Preliminary Technical InformationIXTC220N055T VDSS = 55 VTrenchMVTMID25 = 130 APower MOSFET RDS(on) 4.4 m (Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS220 (IXTC)E153432VDSS TJ = 25C to 175C55 VVDGR TJ = 25C to 175C; RGS = 1 M 55 VVGSM Transient
9.4. Size:186K ixys
ixtc220n075t.pdf
Preliminary Technical InformationIXTC220N075T VDSS = 75 VTrenchMVTMID25 = 115 APower MOSFET RDS(on) 5.0 m (Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS220 (IXTC)E153432VDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C; RGS = 1 M 75 VVGSM Transient
9.5. Size:187K ixys
ixtc240n055t.pdf
Preliminary Technical InformationIXTC240N055T VDSS = 55 VTrenchMVTMID25 = 132 APower MOSFET RDS(on) 4.0 m (Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS240 (IXTC)E153432VDSS TJ = 25C to 175C55 VVDGR TJ = 25C to 175C; RGS = 1 M 55 VVGSM Transient
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