IXTC230N085T Datasheet. Specs and Replacement

Type Designator: IXTC230N085T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Id| ⓘ - Maximum Drain Current: 120 A

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm

Package: ISOPLUS220

IXTC230N085T substitution

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IXTC230N085T datasheet

 9.1. Size:175K  ixys
 ixtc26n50p.pdf pdf_icon

IXTC230N085T

IXTC 26N50P VDSS = 500 V PolarHVTM ID25 = 15 A Power MOSFET RDS(on) 260 m ISOPLUS220TM (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V ISOPLUS220TM (IXTC) E153432 VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS Continuous 30 V VGSM Transi... See More ⇒

 9.2. Size:186K  ixys
 ixtc280n055t.pdf pdf_icon

IXTC230N085T

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 9.3. Size:187K  ixys
 ixtc220n055t.pdf pdf_icon

IXTC230N085T

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 9.4. Size:186K  ixys
 ixtc220n075t.pdf pdf_icon

IXTC230N085T

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Detailed specifications: IXTC160N10T, IXTC180N085T, IXTC180N10T, IXTC200N075T, IXTC200N085T, IXTC200N10T, IXTC220N055T, IXTC220N075T, AO3400A, IXTC240N055T, IXTC250N075T, IXTC26N50P, IXTC280N055T, IXTC36P15P, IXTC62N15P, IXTC75N10, IXTC96N25T

Keywords - IXTC230N085T MOSFET specs

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