IXTC26N50P Todos los transistores

 

IXTC26N50P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTC26N50P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 130 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 400 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.26 Ohm
   Paquete / Cubierta: ISOPLUS220
 

 Búsqueda de reemplazo de IXTC26N50P MOSFET

   - Selección ⓘ de transistores por parámetros

 

IXTC26N50P Datasheet (PDF)

 ..1. Size:175K  ixys
 ixtc26n50p.pdf pdf_icon

IXTC26N50P

IXTC 26N50P VDSS = 500 VPolarHVTMID25 = 15 APower MOSFET RDS(on) 260 m ISOPLUS220TM(Electrically Isolated Tab)N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 500 V ISOPLUS220TM (IXTC)E153432VDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGS Continuous 30 VVGSM Transi

 9.1. Size:186K  ixys
 ixtc280n055t.pdf pdf_icon

IXTC26N50P

Preliminary Technical InformationIXTC280N055T VDSS = 55 VTrenchMVTMID25 = 145 APower MOSFET RDS(on) 3.6 m (Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS220 (IXTC)E153432VDSS TJ = 25C to 175C55 VVDGR TJ = 25C to 175C; RGS = 1 M 55 VVGSM Transient

 9.2. Size:187K  ixys
 ixtc220n055t.pdf pdf_icon

IXTC26N50P

Preliminary Technical InformationIXTC220N055T VDSS = 55 VTrenchMVTMID25 = 130 APower MOSFET RDS(on) 4.4 m (Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS220 (IXTC)E153432VDSS TJ = 25C to 175C55 VVDGR TJ = 25C to 175C; RGS = 1 M 55 VVGSM Transient

 9.3. Size:186K  ixys
 ixtc220n075t.pdf pdf_icon

IXTC26N50P

Preliminary Technical InformationIXTC220N075T VDSS = 75 VTrenchMVTMID25 = 115 APower MOSFET RDS(on) 5.0 m (Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS220 (IXTC)E153432VDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C; RGS = 1 M 75 VVGSM Transient

MOSTRAR MÁS

Otros transistores... IXTC200N075T , IXTC200N085T , IXTC200N10T , IXTC220N055T , IXTC220N075T , IXTC230N085T , IXTC240N055T , IXTC250N075T , IRF1405 , IXTC280N055T , IXTC36P15P , IXTC62N15P , IXTC75N10 , IXTC96N25T , IXTD110N25T-8W , IXTE250N10 , IXTF03N400 .

History: IXTC75N10 | IPL65R190E6 | IPL65R099C7 | IPL65R1K5C6S

 

 
Back to Top

 


 
.