IXTC26N50P Datasheet. Specs and Replacement

Type Designator: IXTC26N50P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 400 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm

Package: ISOPLUS220

IXTC26N50P substitution

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IXTC26N50P datasheet

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IXTC26N50P

IXTC 26N50P VDSS = 500 V PolarHVTM ID25 = 15 A Power MOSFET RDS(on) 260 m ISOPLUS220TM (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V ISOPLUS220TM (IXTC) E153432 VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS Continuous 30 V VGSM Transi... See More ⇒

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IXTC26N50P

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IXTC26N50P

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IXTC26N50P

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Detailed specifications: IXTC200N075T, IXTC200N085T, IXTC200N10T, IXTC220N055T, IXTC220N075T, IXTC230N085T, IXTC240N055T, IXTC250N075T, IRF1405, IXTC280N055T, IXTC36P15P, IXTC62N15P, IXTC75N10, IXTC96N25T, IXTD110N25T-8W, IXTE250N10, IXTF03N400

Keywords - IXTC26N50P MOSFET specs

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