IXTH03N400 Todos los transistores

 

IXTH03N400 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTH03N400
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 130 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 4000 V
   |Id|ⓘ - Corriente continua de drenaje: 0.3 A

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 16.3 nC
   trⓘ - Tiempo de subida: 2.8 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 290 Ohm
   Paquete / Cubierta: TO247
 

 Búsqueda de reemplazo de IXTH03N400 MOSFET

   - Selección ⓘ de transistores por parámetros

 

IXTH03N400 Datasheet (PDF)

 ..1. Size:186K  ixys
 ixth03n400 ixtv03n400s.pdf pdf_icon

IXTH03N400

Advance Technical InformationHigh Voltage VDSS = 4000VIXTH03N400ID25 = 300mAPower MOSFET IXTV03N400S RDS(on) 290 N-Channel Enhancement ModeAvalanche RatedTO-247 (IXTH)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 4000 VDD (Tab)SVDGR TJ = 25C to 150C, RGS = 1M 4000 VVGSS Continuous 20 VVGSM Transie

 9.1. Size:160K  ixys
 ixth04n300p3hv.pdf pdf_icon

IXTH03N400

Advance Technical InformationHigh Voltage VDSS = 3000VIXTH04N300P3HVPower MOSFETID25 = 0.40A RDS(on) 190 N-Channel Enhancement ModeTO-247HVSymbol Test Conditions Maximum RatingsGSVDSS TJ = 25C to 150C 3000 V D (Tab)DVDGR TJ = 25C to 150C, RGS = 1M 3000 VVGSS Continuous 20 VG = Gate D = Drai

 9.2. Size:194K  ixys
 ixth02n250 ixtv02n250s.pdf pdf_icon

IXTH03N400

High VoltageIXTH02N250VDSS = 2500VPower MOSFETsID25 = 200mA IXTV02N250S RDS(on) 450 N-Channel Enhancement ModeFast Intrinsic DiodeTO-247 (IXTH)GD D (Tab)SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 2500 VPLUS220SMD (IXTV_S)VDGR TJ = 25C to 150C, RGS = 1M 2500 VVGSS Continuous 20 VVGSM Transient

 9.3. Size:160K  ixys
 ixth05n250p3hv.pdf pdf_icon

IXTH03N400

Advance Technical InformationHigh Voltage VDSS = 2500VIXTH05N250P3HVPower MOSFETID25 = 0.50A RDS(on) 110 N-Channel Enhancement ModeTO-247HVSymbol Test Conditions Maximum RatingsGSVDSS TJ = 25C to 150C 2500 V D (Tab)DVDGR TJ = 25C to 150C, RGS = 1M 2500 VVGSS Continuous 20 VG = Gate D = Drai

MOSTRAR MÁS

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , 7N65 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IRFBG20 | IXFH76N07-12

 

 
Back to Top

 


 
.