IXTH03N400 MOSFET. Datasheet pdf. Equivalent

   Type Designator: IXTH03N400
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 4000 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 0.3 A
   Qgⓘ - Total Gate Charge: 16.3 nC
   trⓘ - Rise Time: 2.8 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 290 Ohm
   Package: TO247

IXTH03N400 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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