IXTH03N400 datasheet, аналоги, основные параметры

Наименование производителя: IXTH03N400

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 130 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 4000 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.3 A

Электрические характеристики

tr ⓘ - Время нарастания: 2.8 ns

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 290 Ohm

Тип корпуса: TO247

Аналог (замена) для IXTH03N400

- подборⓘ MOSFET транзистора по параметрам

 

IXTH03N400 даташит

 ..1. Size:186K  ixys
 ixth03n400 ixtv03n400s.pdf pdf_icon

IXTH03N400

Advance Technical Information High Voltage VDSS = 4000V IXTH03N400 ID25 = 300mA Power MOSFET IXTV03N400S RDS(on) 290 N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 4000 V D D (Tab) S VDGR TJ = 25 C to 150 C, RGS = 1M 4000 V VGSS Continuous 20 V VGSM Transie

 9.1. Size:160K  ixys
 ixth04n300p3hv.pdf pdf_icon

IXTH03N400

Advance Technical Information High Voltage VDSS = 3000V IXTH04N300P3HV Power MOSFET ID25 = 0.40A RDS(on) 190 N-Channel Enhancement Mode TO-247HV Symbol Test Conditions Maximum Ratings G S VDSS TJ = 25 C to 150 C 3000 V D (Tab) D VDGR TJ = 25 C to 150 C, RGS = 1M 3000 V VGSS Continuous 20 V G = Gate D = Drai

 9.2. Size:194K  ixys
 ixth02n250 ixtv02n250s.pdf pdf_icon

IXTH03N400

High Voltage IXTH02N250 VDSS = 2500V Power MOSFETs ID25 = 200mA IXTV02N250S RDS(on) 450 N-Channel Enhancement Mode Fast Intrinsic Diode TO-247 (IXTH) G D D (Tab) S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 2500 V PLUS220SMD (IXTV_S) VDGR TJ = 25 C to 150 C, RGS = 1M 2500 V VGSS Continuous 20 V VGSM Transient

 9.3. Size:160K  ixys
 ixth05n250p3hv.pdf pdf_icon

IXTH03N400

Advance Technical Information High Voltage VDSS = 2500V IXTH05N250P3HV Power MOSFET ID25 = 0.50A RDS(on) 110 N-Channel Enhancement Mode TO-247HV Symbol Test Conditions Maximum Ratings G S VDSS TJ = 25 C to 150 C 2500 V D (Tab) D VDGR TJ = 25 C to 150 C, RGS = 1M 2500 V VGSS Continuous 20 V G = Gate D = Drai

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... IXTF03N400, IXTF1N250, IXTF1N400, IXTF200N10T, IXTF230N085T, IXTF250N075T, IXTF280N055T, IXTH02N250, IRFP064N, IXTH102N15T, IXTH102N20T, IXTH10N100D, IXTH10N100D2, IXTH10P50P, IXTH10P60, IXTH110N10L2, IXTH110N25T