IXTH140P05T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXTH140P05T
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 298 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 15 V
|Id|ⓘ - Corriente continua de drenaje: 140 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 53 nS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Encapsulados: TO247
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IXTH140P05T datasheet
ixth140p10t ixtt140p10t.pdf
Preliminary Technical Information TrenchPTM VDSS = -100V IXTT140P10T Power MOSFETs ID25 = -140A IXTH140P10T RDS(on) 12m P-Channel Enhancement Mode TO-268 (IXTT) Avalanche Rated G S D (Tab) Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 150 C -100 V VDGR TJ = 25 C to 150 C, RGS = 1M -100 V VGSS Continuous 15 V
ixth14n80.pdf
IXTH 14N80 VDSS = 800 V MegaMOSTMFET ID25 = 14 A RDS(on) = 0.70 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGS Continuous 20 V VGSM Transient 30 V D (TAB) ID25 TC = 25 C14 A IDM TC = 25 C, pulse width limited by TJM 56 A PD TC = 25 C 300 W G
ixth14n100.pdf
IXTH 14N100 VDSS = 1000 V MegaMOSTMFET ID25 = 14 A RDS(on) = 0.82 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C14 A G = Gate, D = Drain, IDM TC = 25 C, pulse width limited by TJM 56 A
Otros transistores... IXTH120P065T, IXTH12N100L, IXTH12N100Q, IXTH12N120, IXTH12N140, IXTH130N10T, IXTH130N15T, IXTH130N20T, IRF640N, IXTH150N17T, IXTH152N085T, IXTH15N50L2, IXTH160N075T, IXTH160N10T, IXTH160N15T, IXTH16N10D2, IXTH16N20D2
History: SFF11N80M
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