IXTH140P05T MOSFET. Datasheet pdf. Equivalent
Type Designator: IXTH140P05T
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 298 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 140 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 200 nC
trⓘ - Rise Time: 53 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO247
IXTH140P05T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXTH140P05T Datasheet (PDF)
ixth140p10t ixtt140p10t.pdf
Preliminary Technical InformationTrenchPTM VDSS = -100VIXTT140P10TPower MOSFETs ID25 = -140AIXTH140P10T RDS(on) 12m P-Channel Enhancement ModeTO-268 (IXTT)Avalanche RatedGSD (Tab)Symbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25C to 150C -100 VVDGR TJ = 25C to 150C, RGS = 1M -100 VVGSS Continuous 15 V
ixth14n80.pdf
IXTH 14N80 VDSS = 800 VMegaMOSTMFETID25 = 14 ARDS(on) = 0.70 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VVGS Continuous 20 VVGSM Transient 30 VD (TAB)ID25 TC = 25C14 AIDM TC = 25C, pulse width limited by TJM 56 APD TC = 25C 300 WG
ixth14n100.pdf
IXTH 14N100 VDSS = 1000 VMegaMOSTMFET ID25 = 14 ARDS(on) = 0.82 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C14 AG = Gate, D = Drain,IDM TC = 25C, pulse width limited by TJM 56 A
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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