All MOSFET. IXTH140P05T Datasheet

 

IXTH140P05T Datasheet and Replacement


   Type Designator: IXTH140P05T
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 298 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 140 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 200 nC
   trⓘ - Rise Time: 53 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO247
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IXTH140P05T Datasheet (PDF)

 6.1. Size:174K  ixys
 ixth140p10t ixtt140p10t.pdf pdf_icon

IXTH140P05T

Preliminary Technical InformationTrenchPTM VDSS = -100VIXTT140P10TPower MOSFETs ID25 = -140AIXTH140P10T RDS(on) 12m P-Channel Enhancement ModeTO-268 (IXTT)Avalanche RatedGSD (Tab)Symbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25C to 150C -100 VVDGR TJ = 25C to 150C, RGS = 1M -100 VVGSS Continuous 15 V

 8.1. Size:88K  ixys
 ixth14n80.pdf pdf_icon

IXTH140P05T

IXTH 14N80 VDSS = 800 VMegaMOSTMFETID25 = 14 ARDS(on) = 0.70 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VVGS Continuous 20 VVGSM Transient 30 VD (TAB)ID25 TC = 25C14 AIDM TC = 25C, pulse width limited by TJM 56 APD TC = 25C 300 WG

 8.2. Size:45K  ixys
 ixth14n100.pdf pdf_icon

IXTH140P05T

IXTH 14N100 VDSS = 1000 VMegaMOSTMFET ID25 = 14 ARDS(on) = 0.82 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C14 AG = Gate, D = Drain,IDM TC = 25C, pulse width limited by TJM 56 A

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History: QM12N70F

Keywords - IXTH140P05T MOSFET datasheet

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