IXTH140P05T Datasheet. Specs and Replacement
Type Designator: IXTH140P05T
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 298 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 140 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 53 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO247
IXTH140P05T substitution
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IXTH140P05T datasheet
ixth140p10t ixtt140p10t.pdf
Preliminary Technical Information TrenchPTM VDSS = -100V IXTT140P10T Power MOSFETs ID25 = -140A IXTH140P10T RDS(on) 12m P-Channel Enhancement Mode TO-268 (IXTT) Avalanche Rated G S D (Tab) Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 150 C -100 V VDGR TJ = 25 C to 150 C, RGS = 1M -100 V VGSS Continuous 15 V ... See More ⇒
ixth14n80.pdf
IXTH 14N80 VDSS = 800 V MegaMOSTMFET ID25 = 14 A RDS(on) = 0.70 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGS Continuous 20 V VGSM Transient 30 V D (TAB) ID25 TC = 25 C14 A IDM TC = 25 C, pulse width limited by TJM 56 A PD TC = 25 C 300 W G... See More ⇒
ixth14n100.pdf
IXTH 14N100 VDSS = 1000 V MegaMOSTMFET ID25 = 14 A RDS(on) = 0.82 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C14 A G = Gate, D = Drain, IDM TC = 25 C, pulse width limited by TJM 56 A... See More ⇒
Detailed specifications: IXTH120P065T, IXTH12N100L, IXTH12N100Q, IXTH12N120, IXTH12N140, IXTH130N10T, IXTH130N15T, IXTH130N20T, IRF640N, IXTH150N17T, IXTH152N085T, IXTH15N50L2, IXTH160N075T, IXTH160N10T, IXTH160N15T, IXTH16N10D2, IXTH16N20D2
Keywords - IXTH140P05T MOSFET specs
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History: IXFT30N60Q
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