IXTH20P50P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXTH20P50P
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 460 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 406 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
Paquete / Cubierta: TO247
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IXTH20P50P Datasheet (PDF)
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IXTH 20N60 VDSS = 600 VMegaMOSTMFETIXTM 20N60 ID25 = 20 ARDS(on) = 0.35 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C 15N60 15 ATO-204 AE (IXTM)20N60 20 AIDM TC = 25C, p
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Preliminary Technical InformationX-Class VDSS = 650VIXTA20N65XPower MOSFET ID25 = 20AIXTP20N65X RDS(on) 210m IXTH20N65XN-Channel Enhancement ModeTO-263 (IXTA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VVG
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Preliminary Technical InformationIXTH200N085T VDSS = 85 VTrenchMVTMIXTQ200N085T ID25 = 200 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25 C to 175 C85 VVDGR TJ = 25 C to 175 C; RGS = 1 M 85 VVGSM Transient 20 VID25 TC = 25 C 20
Otros transistores... IXTH180N10T , IXTH182N055T , IXTH1N100 , IXTH1N250 , IXTH200N075T , IXTH200N085T , IXTH200N10T , IXTH20N50D , 5N60 , IXTH220N055T , IXTH220N075T , IXTH22N50P , IXTH230N085T , IXTH240N055T , IXTH24N50L , IXTH24N50Q , IXTH24P20 .
History: KI2304DS | IPB120P04P4L-03 | HSU80N03
History: KI2304DS | IPB120P04P4L-03 | HSU80N03



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