IXTH20P50P Datasheet. Specs and Replacement

Type Designator: IXTH20P50P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 460 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 103 nC

tr ⓘ - Rise Time: 406 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm

Package: TO247

IXTH20P50P substitution

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IXTH20P50P datasheet

 8.1. Size:316K  ixys
 ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf pdf_icon

IXTH20P50P

Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine ... See More ⇒

 8.2. Size:105K  ixys
 ixth20n60 ixtm20n60.pdf pdf_icon

IXTH20P50P

IXTH 20N60 VDSS = 600 V MegaMOSTMFET IXTM 20N60 ID25 = 20 A RDS(on) = 0.35 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C 15N60 15 A TO-204 AE (IXTM) 20N60 20 A IDM TC = 25 C, p... See More ⇒

 8.3. Size:231K  ixys
 ixta20n65x ixth20n65x ixtp20n65x.pdf pdf_icon

IXTH20P50P

Preliminary Technical Information X-Class VDSS = 650V IXTA20N65X Power MOSFET ID25 = 20A IXTP20N65X RDS(on) 210m IXTH20N65X N-Channel Enhancement Mode TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V VG... See More ⇒

 8.4. Size:205K  ixys
 ixth200n085t ixtq200n085t.pdf pdf_icon

IXTH20P50P

Preliminary Technical Information IXTH200N085T VDSS = 85 V TrenchMVTM IXTQ200N085T ID25 = 200 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V VGSM Transient 20 V ID25 TC = 25 C 20... See More ⇒

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Detailed specifications: IXTH180N10T, IXTH182N055T, IXTH1N100, IXTH1N250, IXTH200N075T, IXTH200N085T, IXTH200N10T, IXTH20N50D, IRLB4132, IXTH220N055T, IXTH220N075T, IXTH22N50P, IXTH230N085T, IXTH240N055T, IXTH24N50L, IXTH24N50Q, IXTH24P20

Keywords - IXTH20P50P MOSFET specs

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