IXTH36P10 Todos los transistores

 

IXTH36P10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTH36P10
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 180 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 36 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 180 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

IXTH36P10 Datasheet (PDF)

 ..1. Size:79K  ixys
 ixth36p10.pdf pdf_icon

IXTH36P10

Advance Technical InformationIXTH 36P10Standard Power MOSFETVDSS = -100 VID25 = -36 AP-Channel Enhancement ModeRDS(on) = 75 mAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 ADVDSS TJ = 25C to 150C -100 VVDGR TJ = 25C to 150C; RGS = 1 M -100 VVGS Continuous 20 VD (TAB)VGSM Transient 30 VID25 TC = 25C -36 AIDM TC

 8.1. Size:181K  ixys
 ixth360n055t2 ixtt360n055t2.pdf pdf_icon

IXTH36P10

Preliminary Technical InformationVDSS = 55VTrenchT2TM PowerIXTH360N055T2ID25 = 360AMOSFET IXTT360N055T2 RDS(on) 2.4m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-247 (IXTH)Symbol Test Conditions Maximum RatingsGDVDSS TJ = 25C to 175C55 V (TAB)SVDGR TJ = 25C to 175C, RGS = 1M 55 VVGSM Transient

 8.2. Size:361K  ixys
 ixth36n50p ixtq36n50p ixtt36n50p ixtv36n50p.pdf pdf_icon

IXTH36P10

IXTH 36N50P VDSS = 500 VPolarHVTMIXTQ 36N50P ID25 = 36 APower MOSFET IXTT 36N50P RDS(on) 170 m IXTV 36N50PN-Channel Enhancement ModeAvalanche Rated IXTV 36N50PSTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 500 VGVDGR TJ = 25 C to 150 C; RGS = 1 M 500 V(TAB)DSVGS Continuous 30 VVGS

 8.3. Size:402K  ixys
 ixth36n50p ixtq36n50p ixtt36n50p ixtv36n50p ixtv36n50ps.pdf pdf_icon

IXTH36P10

IXTH 36N50P VDSS = 500 VPolarHVTMIXTQ 36N50P ID25 = 36 APower MOSFET IXTT 36N50P RDS(on) 170 m IXTV 36N50PN-Channel Enhancement ModeAvalanche Rated IXTV 36N50PSTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 500 VGVDGR TJ = 25 C to 150 C; RGS = 1 M 500 V(TAB)DSVGS Continuous 30 VVGS

MOSTRAR MÁS

Otros transistores... IXTH30N50L , IXTH30N50L2 , IXTH30N50P , IXTH30N60L2 , IXTH30N60P , IXTH32P20T , IXTH360N055T2 , IXTH36N50P , NCEP15T14 , IXTH36P15P , IXTH3N100P , IXTH3N120 , IXTH3N150 , IXTH40N50L2 , IXTH41N25 , IXTH420N04T2 , IXTH440N055T2 .

History: FQD4N25TM | WFY3N02 | APT904R2AN | FDMS2672 | SVF7N60CF | IRF7309IPBF | QS8K2

 

 
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