IXTH36P10 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXTH36P10
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 180 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 36 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 VQgⓘ - Carga de la puerta: 95 nC
trⓘ - Tiempo de subida: 180 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IXTH36P10 MOSFET
IXTH36P10 PDF Specs
ixth36p10.pdf
Advance Technical Information IXTH 36P10 Standard Power MOSFET VDSS = -100 V ID25 = -36 A P-Channel Enhancement Mode RDS(on) = 75 m Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C -100 V VDGR TJ = 25 C to 150 C; RGS = 1 M -100 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C -36 A IDM TC ... See More ⇒
ixth36n50p ixtq36n50p ixtt36n50p ixtv36n50p.pdf
IXTH 36N50P VDSS = 500 V PolarHVTM IXTQ 36N50P ID25 = 36 A Power MOSFET IXTT 36N50P RDS(on) 170 m IXTV 36N50P N-Channel Enhancement Mode Avalanche Rated IXTV 36N50PS TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V G VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V (TAB) D S VGS Continuous 30 V VGS... See More ⇒
ixth36n50p ixtq36n50p ixtt36n50p ixtv36n50p ixtv36n50ps.pdf
IXTH 36N50P VDSS = 500 V PolarHVTM IXTQ 36N50P ID25 = 36 A Power MOSFET IXTT 36N50P RDS(on) 170 m IXTV 36N50P N-Channel Enhancement Mode Avalanche Rated IXTV 36N50PS TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V G VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V (TAB) D S VGS Continuous 30 V VGS... See More ⇒
Otros transistores... IXTH30N50L , IXTH30N50L2 , IXTH30N50P , IXTH30N60L2 , IXTH30N60P , IXTH32P20T , IXTH360N055T2 , IXTH36N50P , IRF1407 , IXTH36P15P , IXTH3N100P , IXTH3N120 , IXTH3N150 , IXTH40N50L2 , IXTH41N25 , IXTH420N04T2 , IXTH440N055T2 .
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Recientemente añadidas las descripciónes de los transistores:
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