IXTH36P10 Specs and Replacement
Type Designator: IXTH36P10
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 36 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 180 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: TO247
IXTH36P10 substitution
IXTH36P10 Specs
ixth36p10.pdf
Advance Technical Information IXTH 36P10 Standard Power MOSFET VDSS = -100 V ID25 = -36 A P-Channel Enhancement Mode RDS(on) = 75 m Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C -100 V VDGR TJ = 25 C to 150 C; RGS = 1 M -100 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C -36 A IDM TC ... See More ⇒
ixth36n50p ixtq36n50p ixtt36n50p ixtv36n50p.pdf
IXTH 36N50P VDSS = 500 V PolarHVTM IXTQ 36N50P ID25 = 36 A Power MOSFET IXTT 36N50P RDS(on) 170 m IXTV 36N50P N-Channel Enhancement Mode Avalanche Rated IXTV 36N50PS TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V G VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V (TAB) D S VGS Continuous 30 V VGS... See More ⇒
ixth36n50p ixtq36n50p ixtt36n50p ixtv36n50p ixtv36n50ps.pdf
IXTH 36N50P VDSS = 500 V PolarHVTM IXTQ 36N50P ID25 = 36 A Power MOSFET IXTT 36N50P RDS(on) 170 m IXTV 36N50P N-Channel Enhancement Mode Avalanche Rated IXTV 36N50PS TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V G VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V (TAB) D S VGS Continuous 30 V VGS... See More ⇒
Detailed specifications: IXTH30N50L , IXTH30N50L2 , IXTH30N50P , IXTH30N60L2 , IXTH30N60P , IXTH32P20T , IXTH360N055T2 , IXTH36N50P , IRF1407 , IXTH36P15P , IXTH3N100P , IXTH3N120 , IXTH3N150 , IXTH40N50L2 , IXTH41N25 , IXTH420N04T2 , IXTH440N055T2 .
Keywords - IXTH36P10 MOSFET specs
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