IXTH80N20L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXTH80N20L Datasheet (PDF)

7.1. Size:113K ixys
ixth80n65x2.pdf pdf_icon

Advance Technical InformationX2-Class VDSS = 650VIXTH80N65X2Power MOSFETTM ID25 = 80A RDS(on) 40m N-Channel Enhancement ModeAvalanche RatedTO-247GSymbol Test Conditions Maximum Ratings DSD (Tab)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VG = Gate D = DrainS = Source Tab = DrainVGSS Contin

7.2. Size:168K ixys
ixta80n075l2 ixth80n075l2 ixtp80n075l2.pdf pdf_icon

Advance Technical InformationLinearL2TM Power VDSS = 75VIXTA80N075L2MOSFETs w/Extended ID25 = 80AIXTP80N075L2 RDS(on) 24m FBSOAIXTH80N075L2N-Channel Enhancement ModeTO-263AA (IXTA)Guaranteed FBSOAAvalanche RatedGSD (Tab)TO-220AB (IXTP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 75 VVDGR TJ = 25

9.1. Size:74K 1
ixth7p50 ixth8p50.pdf pdf_icon

VDSS ID25 RDS(on)IXTH 7P50 -500V -7 A 1.5 Standard Power MOSFETIXTH 8P50 -500V -8 A 1.2 P-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 ADVDSS TJ = 25C to 150C -500 VVDGR TJ = 25C to 150C; RGS = 1 M -500 VVGS Continuous 20 VD (TAB)VGSM Transient 30 VID25 TC = 25C 7P50 -7 A8P50 -8 AIDM TC = 25C, pulse w

9.2. Size:324K ixys
ixth88n30p ixtk88n30p ixtt88n30p ixtq88n30p.pdf pdf_icon

IXTH 88N30P VDSS = 300 VPolarHTTMIXTK 88N30P ID25 = 88 APower MOSFET IXTQ 88N30P RDS(on) 40 m IXTT 88N30PN-Channel Enhancement ModeAvalanche RatedTO-247 (IXTH)Symbol Test Conditions Maximum RatingsD (TAB)GDVDSS TJ = 25 C to 150 C 300 VSVDGR TJ = 25 C to 150 C; RGS = 1 M 300 VVGS Continuous 20 VTO-264 (IXTK)