IXTH80N20L Datasheet. Specs and Replacement

Type Designator: IXTH80N20L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 520 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: TO247

IXTH80N20L substitution

- MOSFET ⓘ Cross-Reference Search

 

IXTH80N20L datasheet

 7.1. Size:113K  ixys
 ixth80n65x2.pdf pdf_icon

IXTH80N20L

Advance Technical Information X2-Class VDSS = 650V IXTH80N65X2 Power MOSFETTM ID25 = 80A RDS(on) 40m N-Channel Enhancement Mode Avalanche Rated TO-247 G Symbol Test Conditions Maximum Ratings D S D (Tab) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V G = Gate D = Drain S = Source Tab = Drain VGSS Contin... See More ⇒

 7.2. Size:168K  ixys
 ixta80n075l2 ixth80n075l2 ixtp80n075l2.pdf pdf_icon

IXTH80N20L

Advance Technical Information LinearL2TM Power VDSS = 75V IXTA80N075L2 MOSFETs w/Extended ID25 = 80A IXTP80N075L2 RDS(on) 24m FBSOA IXTH80N075L2 N-Channel Enhancement Mode TO-263AA (IXTA) Guaranteed FBSOA Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 75 V VDGR TJ = 25 ... See More ⇒

 9.1. Size:74K  1
 ixth7p50 ixth8p50.pdf pdf_icon

IXTH80N20L

VDSS ID25 RDS(on) IXTH 7P50 -500V -7 A 1.5 Standard Power MOSFET IXTH 8P50 -500V -8 A 1.2 P-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C -500 V VDGR TJ = 25 C to 150 C; RGS = 1 M -500 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C 7P50 -7 A 8P50 -8 A IDM TC = 25 C, pulse w... See More ⇒

 9.2. Size:324K  ixys
 ixth88n30p ixtk88n30p ixtt88n30p ixtq88n30p.pdf pdf_icon

IXTH80N20L

IXTH 88N30P VDSS = 300 V PolarHTTM IXTK 88N30P ID25 = 88 A Power MOSFET IXTQ 88N30P RDS(on) 40 m IXTT 88N30P N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings D (TAB) G D VDSS TJ = 25 C to 150 C 300 V S VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGS Continuous 20 V TO-264 (IXTK) ... See More ⇒

SHOW MORE

Detailed specifications: IXTH6N120, IXTH6N150, IXTH6N50D2, IXTH72N20, IXTH75N10L2, IXTH75N15, IXTH76N25T, IXTH76P10T, 60N06, IXTH86N25T, IXTH88N15, IXTH88N30P, IXTH90N15T, IXTH90P10P, IXTH96N20P, IXTH96N25T, IXTH96P085T

Keywords - IXTH80N20L MOSFET specs

 IXTH80N20L cross reference

 IXTH80N20L equivalent finder

 IXTH80N20L pdf lookup

 IXTH80N20L substitution

 IXTH80N20L replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.