2N4416 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N4416
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 0.03 A
Tjⓘ - Temperatura máxima de unión: 200 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(off)|ⓘ - Voltaje de corte de la puerta: 1 V
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 150 Ohm
Paquete / Cubierta: TO18 TO72
Búsqueda de reemplazo de MOSFET 2N4416
2N4416 Datasheet (PDF)
2n4416 2n4416a sst4416.pdf
2N4416/2N4416A/SST4416Vishay SiliconixN-Channel JFETsPRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)2N4416 -v6 -30 4.5 52N4416A -2.5 to -6 -35 4.5 5SST4416 -v6 -30 4.5 5FEATURES BENEFITS APPLICATIONSD Excellent High-Frequency Gain: D Wideband High Gain D High-Frequency Amplifier/Mixer2N4416/A, Gps 13 dB (typ) @D Very High System Sensitiv
2n4416-a.pdf
TM2N4416Central2N4416ASemiconductor Corp.N-CHANNEL JFETDESCRIPTION:The CENTRAL SEMICONDUCTOR 2N4416 and2N4416A are silicon N-Channel Junction FieldEffect Transistors designed for VHF amplifier andmixer applications.MARKING CODE:Full Part NmberJEDEC TO-72 CASEMAXIMUM RATINGS: (TA=25C)SYMBOL 2N4416 2N4416A UNITSGate-Drain Voltage VGD 30 35 VGate-Source Voltage
2n4416a.pdf
2N4416A2N4416ASMALL SIGNAL NCHANNEL JFET THAT ISDESIGNED TO PROVIDE HIGHMECHANICAL DATAPERFORMANCE AMPLIFICATION ATDimensions in mm (inches)HIGH FREQUENCIES4.95 (0.195)4.52 (0.178)4.95 (0.195)4.52 (0.178)FEATURES EXCELLENT HIGH FREQUENCY GAINS0.48 (0.019)0.41 (0.016) CECC SCREENING OPTIONSdia. SPACE QUALITY LEVEL OPTIONS2.54 (0.100)Nom.
2n4416ac1a 2n4416ac1b 2n4416ac1c 2n4416ac1d.pdf
SILICON SMALL SIGNAL N-CHANNEL JFET 2N4416AC1 Low Noise, High Gain. Hermetic Surface Mounted Package. Designed For VHF/UHF Amplifiers, Oscillators And Mixers. Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VDS Drain Source Voltage 35V VGS Gate Source Voltage -35V VGD Gate Drain Voltage -35V IG
2n4416dcsm.pdf
2N4416DCSMSEMELABSMALL SIGNAL DUALNCHANNEL JFET IN AHERMETICALLY SEALEDCERAMIC SURFACE MOUNT PACKAGEFOR HIGH RELIABILITY APPLICATIONSMECHANICAL DATADimensions in mm (inches)FEATURES1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005) HERMETIC CERAMIC SURFACE MOUNTPACKAGE2 3 CECC SCREENING OPTIONS1 4A SPACE
2n4416acsm 2n4416csm.pdf
2N4416CSMA2N4416ACSMSMALL SIGNAL NCHANNEL JFET IN AHERMETICALLY SEALEDCERAMIC SURFACE MOUNT PACKAGEMECHANICAL DATADimensions in mm (inches)FOR HIGH RELIABILITY APPLICATIONS0.51 0.10(0.02 0.004) 0.31rad.(0.012)FEATURES3 HERMETIC CERAMIC SURFACE MOUNTPACKAGE (SOT23 COMPATIBLE)21 CECC SCREENING OPTIONS1.91 0.10 SPACE QUALITY LEVEL OPT
2n4416-a pn4416.pdf
N-Channel JFETHigh Frequency AmplifierCORPORATION2N4416 / 2N4416A / PN4416FEATURES ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise noted)A Low Noise Low Feedback Capacitance Gate-Source or Gate-Drain Voltage Low Output Capacitance 2N4416, PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V High Transconductance 2N4416A . . . .
Otros transistores... 2N3824 , 2N3824LP , 2N4391 , 2N4391CSM , 2N4392 , 2N4392CSM , 2N4393 , 2N4393CSM , IRF540N , 2N5045 , 2N5484 , 2N5485 , 2N5486 , 2N6656 , 2N6657 , 2N6658 , 2N6659 .
Liste
Recientemente añadidas las descripciónes de los transistores:
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