All MOSFET. 2N4416 Datasheet

 

2N4416 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N4416

Type of Transistor: JFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.3 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 0.03 A

Maximum Junction Temperature (Tj): 200 °C

Maximum Drain-Source On-State Resistance (Rds): 150 Ohm

Package: TO18, TO72

2N4416 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N4416 Datasheet (PDF)

0.1. 2n4416 2n4416a sst4416.pdf Size:81K _vishay

2N4416
2N4416

2N4416/2N4416A/SST4416 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N4416 -v6 -30 4.5 5 2N4416A -2.5 to -6 -35 4.5 5 SST4416 -v6 -30 4.5 5 FEATURES BENEFITS APPLICATIONS D Excellent High-Frequency Gain: D Wideband High Gain D High-Frequency Amplifier/Mixer 2N4416/A, Gps 13 dB (typ) @ D Very High System Sensitiv

0.2. 2n4416-a.pdf Size:82K _central

2N4416
2N4416

TM 2N4416 Central 2N4416A Semiconductor Corp. N-CHANNEL JFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4416 and 2N4416A are silicon N-Channel Junction Field Effect Transistors designed for VHF amplifier and mixer applications. MARKING CODE: Full Part Nmber JEDEC TO-72 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL 2N4416 2N4416A UNITS Gate-Drain Voltage VGD 30 35 V Gate-Source Voltage

 0.3. 2n4416a.pdf Size:17K _semelab

2N4416
2N4416

2N4416A 2N4416A SMALL SIGNAL N–CHANNEL J–FET THAT IS DESIGNED TO PROVIDE HIGH MECHANICAL DATA PERFORMANCE AMPLIFICATION AT Dimensions in mm (inches) HIGH FREQUENCIES 4.95 (0.195) 4.52 (0.178) 4.95 (0.195) 4.52 (0.178) FEATURES • EXCELLENT HIGH FREQUENCY GAINS 0.48 (0.019) 0.41 (0.016) • CECC SCREENING OPTIONS dia. • SPACE QUALITY LEVEL OPTIONS 2.54 (0.100) Nom.

0.4. 2n4416acsm 2n4416csm.pdf Size:27K _semelab

2N4416
2N4416

2N4416CSMA 2N4416ACSM SMALL SIGNAL N–CHANNEL J–FET IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA Dimensions in mm (inches) FOR HIGH RELIABILITY APPLICATIONS 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) FEATURES 3 • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) 21 • CECC SCREENING OPTIONS 1.91 ± 0.10 • SPACE QUALITY LEVEL OPT

 0.5. 2n4416ac1a 2n4416ac1b 2n4416ac1c 2n4416ac1d.pdf Size:579K _semelab

2N4416
2N4416

SILICON SMALL SIGNAL N-CHANNEL JFET 2N4416AC1 • Low Noise, High Gain. • Hermetic Surface Mounted Package. • Designed For VHF/UHF Amplifiers, Oscillators And Mixers. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VDS Drain – Source Voltage 35V VGS Gate – Source Voltage -35V VGD Gate – Drain Voltage -35V IG

0.6. 2n4416dcsm.pdf Size:49K _semelab

2N4416
2N4416

2N4416DCSM SEME LAB SMALL SIGNAL DUAL N–CHANNEL J–FET IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) FEATURES 1.40 ± 0.15 2.29 ± 0.20 1.65 ± 0.13 (0.055 ± 0.006) (0.09 ± 0.008) (0.065 ± 0.005) • HERMETIC CERAMIC SURFACE MOUNT PACKAGE 2 3 • CECC SCREENING OPTIONS 1 4 A • SPACE

0.7. 2n4416-a pn4416.pdf Size:23K _calogic

2N4416
2N4416

N-Channel JFET High Frequency Amplifier CORPORATION 2N4416 / 2N4416A / PN4416 FEATURES ABSOLUTE MAXIMUM RATINGS (T = 25oC unless otherwise noted) A • Low Noise • • Low Feedback Capacitance Gate-Source or Gate-Drain Voltage • • Low Output Capacitance 2N4416, PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V • • High Transconductance 2N4416A . . . .

Datasheet: 2N3824 , 2N3824LP , 2N4391 , 2N4391CSM , 2N4392 , 2N4392CSM , 2N4393 , 2N4393CSM , 2N7000 , 2N5045 , 2N5484 , 2N5485 , 2N5486 , 2N6656 , 2N6657 , 2N6658 , 2N6659 .

 

 
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