IXTQ30N60L2 Todos los transistores

 

IXTQ30N60L2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTQ30N60L2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 540 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 30 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4.5 V

Carga de compuerta (Qg): 335 nC

Tiempo de elevación (tr): 710 nS

Resistencia drenaje-fuente RDS(on): 0.24 Ohm

Empaquetado / Estuche: TO3P

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IXTQ30N60L2 Datasheet (PDF)

1.1. ixth30n60p ixtq30n60p ixtt30n60p ixtv30n60p.pdf Size:352K _ixys

IXTQ30N60L2
IXTQ30N60L2

IXTH 30N60P VDSS = 600 V PolarHVTM IXTQ 30N60P ID25 = 30 A Power MOSFET ? ? ? ? IXTT 30N60P RDS(on) ? 240 m? ? ? ? ? N-Channel Enhancement Mode IXTV 30N60P Avalanche Rated IXTV 30N60PS Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V VGSS Continuous 30 V VGSM Transient 40 V G D (TAB) D ID25 TC =

1.2. ixtq30n60p.pdf Size:210K _inchange_semiconductor

IXTQ30N60L2
IXTQ30N60L2

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXTQ30N60P ·FEATURES ·With TO-3PN packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

 3.1. ixth30n50p ixtq30n50p ixtt30n50p ixtv30n50p.pdf Size:336K _ixys

IXTQ30N60L2
IXTQ30N60L2

VDSS = 500 V IXTH 30N50P PolarHVTM ID25 = 30 A IXTQ 30N50P Power MOSFET ? ? RDS(on) ? 200 m? ? ? ? ? ? ? IXTT 30N50P N-Channel Enhancement Mode IXTV 30N50P Avalanche Rated IXTV 30N50PS TO-247 AD (IXTH) (TAB) Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V VGSS Continuous 30 V VGSM Transient 40

3.2. ixth30n50l2-ixtq30n50l2-ixtt30n50l2.pdf Size:142K _ixys

IXTQ30N60L2
IXTQ30N60L2

IXTH30N50L2 VDSS = 500V Linear L2TM Power IXTQ30N50L2 ID25 = 30A MOSFET with extended ? ? IXTT30N50L2 RDS(on) ? ? ? 200m? ? ? ? ? FBSOA D D D D O D O N-Channel Enhancement Mode TO-247 (IXTH) RGi w w G O O (TAB) S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V TO-3P (IXTQ) VDGR TJ = 25C to 150C, RGS = 1M? 500 V VGSS Continuous 20 V VGSM Transie

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