IXTQ30N60L2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXTQ30N60L2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 540 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 710 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.24 Ohm
Paquete / Cubierta: TO3P
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IXTQ30N60L2 Datasheet (PDF)
ixth30n60p ixtq30n60p ixtt30n60p ixtv30n60p.pdf

IXTH 30N60P VDSS = 600 VPolarHVTMIXTQ 30N60P ID25 = 30 APower MOSFET IXTT 30N60P RDS(on) 240 m N-Channel Enhancement ModeIXTV 30N60PAvalanche RatedIXTV 30N60PSSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 600 VVGSS Continuous 30 VVGSM Transient
ixth30n60p ixtq30n60p ixtt30n60p ixtv30n60p ixtv30n60ps.pdf

IXTH 30N60P VDSS = 600 VPolarHVTMIXTQ 30N60P ID25 = 30 APower MOSFET IXTT 30N60P RDS(on) 240 m N-Channel Enhancement ModeIXTV 30N60PAvalanche RatedIXTV 30N60PSSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 600 VVGSS Continuous 30 VVGSM Transient
ixtq30n60p.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IXTQ30N60PFEATURESWith TO-3PN packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source
Otros transistores... IXTQ250N075T , IXTQ26N50P , IXTQ26N60P , IXTQ26P20P , IXTQ280N055T , IXTQ30N50L , IXTQ30N50L2 , IXTQ30N50P , AO4407 , IXTQ30N60P , IXTQ32P20T , IXTQ36N30P , IXTQ36N50P , IXTQ36P15P , IXTQ40N50L2 , IXTQ40N50Q , IXTQ42N25P .
History: IRFB3306 | TMP4N80



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