IXTQ30N60L2 Datasheet. Specs and Replacement

Type Designator: IXTQ30N60L2  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 540 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 710 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm

Package: TO3P

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IXTQ30N60L2 datasheet

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IXTQ30N60L2

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXTQ30N60P FEATURES With TO-3PN packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source ... See More ⇒

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Detailed specifications: IXTQ250N075T, IXTQ26N50P, IXTQ26N60P, IXTQ26P20P, IXTQ280N055T, IXTQ30N50L, IXTQ30N50L2, IXTQ30N50P, IRF530, IXTQ30N60P, IXTQ32P20T, IXTQ36N30P, IXTQ36N50P, IXTQ36P15P, IXTQ40N50L2, IXTQ40N50Q, IXTQ42N25P

Keywords - IXTQ30N60L2 MOSFET specs

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