IXTT120N15P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXTT120N15P Datasheet (PDF)

..1. Size:171K ixys
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IXTQ 120N15P VDSS = 150 VPolarHTTMIXTT 120N15P ID25 = 120 APower MOSFET RDS(on) 16 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25 C to 175 C 150 VVDGR TJ = 25 C to 175 C; RGS = 1 M 150 VVDSS Continuous 20 VVGSM Transient 30 VID25 TC = 25 C 120 A GD

8.1. Size:175K ixys
ixtt12n150 ixth12n150.pdf pdf_icon

High Voltage VDSS = 1500VIXTT12N150ID25 = 12APower MOSFETIXTH12N150 RDS(on) 2.2 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-268 (IXTT)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VVGSS Continuous 30 VTO-247 (IXTH)VG

8.2. Size:122K ixys
ixth12n150 ixtt12n150.pdf pdf_icon

High Voltage VDSS = 1500VIXTT12N150ID25 = 12APower MOSFETsIXTH12N150 RDS(on) 2 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-268 (IXTT)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VVGSS Continuous 30 VTO-247 (IXTH)VGSM Transient

8.3. Size:142K ixys
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High Voltage VDSS = 1500VIXTT12N150HVID25 = 12APower MOSFET RDS(on) 2.2 N-Channel Enhancement ModeFast Intrinsic DiodeTO-268HVGSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VG = Gate D = DrainVGSS Continuous 30 V

Otros transistores... IXTT100N25P , IXTT10N100D , IXTT10N100D2 , IXTT10P50 , IXTT10P60 , IXTT110N10L2 , IXTT110N10P , IXTT11P50 , IRFP460 , IXTT12N140 , IXTT140N10P , IXTT16N10D2 , IXTT16N20D2 , IXTT16N50D2 , IXTT16P60P , IXTT170N10P , IXTT1N100 .