IXTT120N15P Datasheet. Specs and Replacement

Type Designator: IXTT120N15P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 600 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO268

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IXTT120N15P datasheet

 ..1. Size:171K  ixys
 ixtq120n15p ixtt120n15p.pdf pdf_icon

IXTT120N15P

IXTQ 120N15P VDSS = 150 V PolarHTTM IXTT 120N15P ID25 = 120 A Power MOSFET RDS(on) 16 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1 M 150 V VDSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C 120 A G D... See More ⇒

 8.1. Size:175K  ixys
 ixtt12n150 ixth12n150.pdf pdf_icon

IXTT120N15P

High Voltage VDSS = 1500V IXTT12N150 ID25 = 12A Power MOSFET IXTH12N150 RDS(on) 2.2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 1500 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V VGSS Continuous 30 V TO-247 (IXTH) VG... See More ⇒

 8.2. Size:122K  ixys
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IXTT120N15P

High Voltage VDSS = 1500V IXTT12N150 ID25 = 12A Power MOSFETs IXTH12N150 RDS(on) 2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 1500 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V VGSS Continuous 30 V TO-247 (IXTH) VGSM Transient... See More ⇒

 8.3. Size:142K  ixys
 ixtt12n150hv.pdf pdf_icon

IXTT120N15P

High Voltage VDSS = 1500V IXTT12N150HV ID25 = 12A Power MOSFET RDS(on) 2.2 N-Channel Enhancement Mode Fast Intrinsic Diode TO-268HV G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 1500 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V G = Gate D = Drain VGSS Continuous 30 V ... See More ⇒

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Detailed specifications: IXTT100N25P, IXTT10N100D, IXTT10N100D2, IXTT10P50, IXTT10P60, IXTT110N10L2, IXTT110N10P, IXTT11P50, IRF640, IXTT12N140, IXTT140N10P, IXTT16N10D2, IXTT16N20D2, IXTT16N50D2, IXTT16P60P, IXTT170N10P, IXTT1N100

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