BLF278 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BLF278

Tipo de FET: LDMOS

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm

Encapsulados: SOT262A1

 Búsqueda de reemplazo de BLF278 MOSFET

- Selecciónⓘ de transistores por parámetros

 

BLF278 datasheet

 ..1. Size:157K  philips
blf278.pdf pdf_icon

BLF278

DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLF278 VHF push-pull power MOS transistor Product Specification 2003 Sep 19 Supersedes data of 1996 Oct 21 Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 FEATURES PINNING - SOT262A1 High power gain PIN DESCRIPTION Easy power control 1 drain 1 Good thermal stability 2 drain 2 Gold

 ..2. Size:135K  philips
blf278 3.pdf pdf_icon

BLF278

DISCRETE SEMICONDUCTORS DATA SHEET BLF278 VHF push-pull power MOS transistor 1996 Oct 21 Product Specification Supersedes data of October 1992 Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 FEATURES PINNING - SOT262A1 High power gain PIN SYMBOL DESCRIPTION Easy power control 1d1 drain 1 Good thermal stability 2d2 drain 2

 9.1. Size:81K  philips
blf277.pdf pdf_icon

BLF278

DISCRETE SEMICONDUCTORS DATA SHEET BLF277 VHF power MOS transistor September 1992 Product specification Philips Semiconductors Product specification VHF power MOS transistor BLF277 FEATURES PIN CONFIGURATION High power gain Easy power control Gold metallization ensures excellent reliability andbook, halfpage Good thermal stability 1 2 Withstands full load mi

 9.2. Size:85K  philips
blf276.pdf pdf_icon

BLF278

DISCRETE SEMICONDUCTORS DATA SHEET BLF276 VHF power MOS transistor December 1997 Product specification Philips Semiconductors Product specification VHF power MOS transistor BLF276 FEATURES PIN CONFIGURATION High power gain Easy power control page Good thermal stability 1 2 d DESCRIPTION 3 4 g Silicon N-channel enhancement s MBB072 mode vertical D-MOS transistor

Otros transistores... BLF2425M7L250P, BLF2425M7LS250P, BLF244, BLF245, BLF245B, BLF246, BLF246B, BLF248, SI2302, BLF346, BLF368, BLF369, BLF3G21-30, BLF3G21-6, BLF404, BLF521, BLF542