BLF278
MOSFET. Datasheet pdf. Equivalent
Type Designator: BLF278
Type of Transistor: LDMOS
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 250
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 18
A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3
Ohm
Package: SOT262A1
BLF278
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLF278
Datasheet (PDF)
..1. Size:157K philips
blf278.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D091BLF278VHF push-pull power MOStransistorProduct Specification 2003 Sep 19Supersedes data of 1996 Oct 21Philips Semiconductors Product SpecificationVHF push-pull power MOS transistor BLF278FEATURES PINNING - SOT262A1 High power gainPIN DESCRIPTION Easy power control1 drain 1 Good thermal stability2 drain 2 Gold
..2. Size:135K philips
blf278 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLF278VHF push-pull power MOStransistor1996 Oct 21Product SpecificationSupersedes data of October 1992Philips Semiconductors Product SpecificationVHF push-pull power MOS transistor BLF278FEATURES PINNING - SOT262A1 High power gainPIN SYMBOL DESCRIPTION Easy power control1d1 drain 1 Good thermal stability2d2 drain 2
9.1. Size:81K philips
blf277.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLF277VHF power MOS transistorSeptember 1992Product specificationPhilips Semiconductors Product specificationVHF power MOS transistor BLF277FEATURES PIN CONFIGURATION High power gain Easy power control Gold metallization ensuresexcellent reliabilityandbook, halfpage Good thermal stability1 2 Withstands full load mi
9.2. Size:85K philips
blf276.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLF276VHF power MOS transistorDecember 1997Product specificationPhilips Semiconductors Product specificationVHF power MOS transistor BLF276FEATURES PIN CONFIGURATION High power gain Easy power controlpage Good thermal stability1 2dDESCRIPTION3 4gSilicon N-channel enhancementsMBB072mode vertical D-MOS transistor
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