BLF369 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLF369
Tipo de FET: LDMOS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 500 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 32 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
Paquete / Cubierta: SOT8002
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BLF369 Datasheet (PDF)
blf369.pdf
BLF369Multi-use VHF power LDMOS transistorRev. 04 19 February 2009 Product data sheet1. Product profile1.1 General descriptionA general purpose 500 W LDMOS RF power transistor for pulsed and continuous waveapplications in the HF/VHF band up to 500 MHz.Table 1. Typical performanceTypical RF performance at VDS = 32 V and Th =25 C in a common-source 225 MHz test circuit.[1]
blf368.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D091BLF368VHF push-pull power MOStransistor1998 Jul 29Product specificationSupersedes data of September 1992Philips Semiconductors Product specificationVHF push-pull power MOS transistor BLF368FEATURES PIN CONFIGURATION High power gain Easy power control1 2 Good thermal stabilityd2ndbook, halfpage Gold metalliza
blf368 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D091BLF368VHF push-pull power MOStransistorProduct specification 2003 Sep 26Supersedes data of 1998 Jul 29Philips Semiconductors Product specificationVHF push-pull power MOS transistor BLF368FEATURES PIN CONFIGURATION High power gain Easy power control1 2 Good thermal stabilityd2ndbook, halfpage Gold metallization
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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