BLF369
MOSFET. Datasheet pdf. Equivalent
Type Designator: BLF369
Type of Transistor: LDMOS
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 500
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 32
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5
V
|Id|ⓘ - Maximum Drain Current: 100
A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04
Ohm
Package: SOT8002
BLF369
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLF369
Datasheet (PDF)
..1. Size:156K nxp
blf369.pdf
BLF369Multi-use VHF power LDMOS transistorRev. 04 19 February 2009 Product data sheet1. Product profile1.1 General descriptionA general purpose 500 W LDMOS RF power transistor for pulsed and continuous waveapplications in the HF/VHF band up to 500 MHz.Table 1. Typical performanceTypical RF performance at VDS = 32 V and Th =25 C in a common-source 225 MHz test circuit.[1]
9.1. Size:106K philips
blf368.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D091BLF368VHF push-pull power MOStransistor1998 Jul 29Product specificationSupersedes data of September 1992Philips Semiconductors Product specificationVHF push-pull power MOS transistor BLF368FEATURES PIN CONFIGURATION High power gain Easy power control1 2 Good thermal stabilityd2ndbook, halfpage Gold metalliza
9.2. Size:111K philips
blf368 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D091BLF368VHF push-pull power MOStransistorProduct specification 2003 Sep 26Supersedes data of 1998 Jul 29Philips Semiconductors Product specificationVHF push-pull power MOS transistor BLF368FEATURES PIN CONFIGURATION High power gain Easy power control1 2 Good thermal stabilityd2ndbook, halfpage Gold metallization
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