BLF3G21-30 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLF3G21-30
Tipo de FET: LDMOS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 26 V
|Id|ⓘ - Corriente continua de drenaje: 4.5 A
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
Paquete / Cubierta: SOT467C
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BLF3G21-30 Datasheet (PDF)
blf3g21-30.pdf
BLF3G21-30UHF power LDMOS transistorRev. 01 14 February 2007 Product data sheet1. Product profile1.1 General description30 W LDMOS power transistor for base station applications at frequencies fromHF to 2200 MHz.Table 1. Typical class-AB RF performanceIDq = 450 mA; Th = 25 C in a common source test circuit.Mode of operation f PL Gp D IMD3 PL(1dB)(MHz) (W) (dB) (%) (d
blf3g21-6.pdf
BLF3G21-6UHF power LDMOS transistorRev. 01 25 June 2008 Product data sheet1. Product profile1.1 General description6 W LDMOS power transistor for base station applications at frequencies fromHF to 2200 MHzTable 1. Typical class-AB RF performanceIDq = 90 mA; Th = 25 C in a common source test circuit.Mode of operation f PL Gp D IMD3 PL(1dB)(MHz) (W) (dB) (%) (dB) (W)
blf3g22-30.pdf
BLF3G22-30UHF power LDMOS transistorRev. 01 21 June 2007 Product data sheet1. Product profile1.1 General description30 W LDMOS power transistor for base station applications at frequencies from2000 MHz to 2200 MHzTable 1. Typical class-AB RF performanceIDq = 450 mA; Th = 25 C in a common source test circuit.Mode of operation f1 f2 VDS IDq PL(PEP) PL(AV) Gp D IMD ACPR I
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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