BLF3G21-30 - описание и поиск аналогов

BLF3G21-30 UHF power LDMOS transistor Rev. 01 14 February 2007 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz. Table 1. Typical class-AB RF performance IDq = 450 mA; Th = 25 C in a common source test circuit. Mode of operation f PL Gp D IMD3 PL(1dB) (MHz) (W) (dB) (%) (d

BLF3G21-6 UHF power LDMOS transistor Rev. 01 25 June 2008 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical class-AB RF performance IDq = 90 mA; Th = 25 C in a common source test circuit. Mode of operation f PL Gp D IMD3 PL(1dB) (MHz) (W) (dB) (%) (dB) (W)

BLF3G22-30 UHF power LDMOS transistor Rev. 01 21 June 2007 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz Table 1. Typical class-AB RF performance IDq = 450 mA; Th = 25 C in a common source test circuit. Mode of operation f1 f2 VDS IDq PL(PEP) PL(AV) Gp D IMD ACPR I