All MOSFET. BLF3G21-30 Datasheet

 

BLF3G21-30 MOSFET. Datasheet pdf. Equivalent

Type Designator: BLF3G21-30

Type of Transistor: LDMOS

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 30 W

Maximum Drain-Source Voltage |Vds|: 26 V

Maximum Drain Current |Id|: 4.5 A

Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm

Package: SOT467C

BLF3G21-30 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BLF3G21-30 PDF doc:

1.1. blf3g21-30.pdf Size:99K _philips

BLF3G21-30
BLF3G21-30

BLF3G21-30 UHF power LDMOS transistor Rev. 01 14 February 2007 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz. Table 1. Typical class-AB RF performance IDq = 450 mA; Th = 25 C in a common source test circuit. Mode of operation f PL Gp ?D IMD3 PL(1dB) (MHz) (W) (dB) (%) (dB) (W)

2.1. blf3g21-6.pdf Size:96K _philips

BLF3G21-30
BLF3G21-30

BLF3G21-6 UHF power LDMOS transistor Rev. 01 25 June 2008 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical class-AB RF performance IDq = 90 mA; Th = 25 C in a common source test circuit. Mode of operation f PL Gp ?D IMD3 PL(1dB) (MHz) (W) (dB) (%) (dB) (W) CW 2000

4.1. blf3g22-30.pdf Size:108K _philips

BLF3G21-30
BLF3G21-30

BLF3G22-30 UHF power LDMOS transistor Rev. 01 21 June 2007 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz Table 1. Typical class-AB RF performance IDq = 450 mA; Th = 25 C in a common source test circuit. Mode of operation f1 f2 VDS IDq PL(PEP) PL(AV) Gp ?D IMD ACPR IMD3 (M

Datasheet: BLF245B , BLF246 , BLF246B , BLF248 , BLF278 , BLF346 , BLF368 , BLF369 , BUZ10 , BLF3G21-6 , BLF404 , BLF521 , BLF542 , BLF544 , BLF546 , BLF548 , BLF571 .

 


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