BLF3G21-30 LDMOS Datasheet: N-Ch, 26V, 4.5A. Full specification with pinout and replacement list

BLF3G21-30 Specs and Replacement

Type Designator: BLF3G21-30

Type of Transistor: LDMOS

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 26 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: SOT467C

BLF3G21-30 substitution

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BLF3G21-30 datasheet

..1. Size:99K philips
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BLF3G21-30 UHF power LDMOS transistor Rev. 01 14 February 2007 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz. Table 1. Typical class-AB RF performance IDq = 450 mA; Th = 25 C in a common source test circuit. Mode of operation f PL Gp D IMD3 PL(1dB) (MHz) (W) (dB) (%) (d... See More ⇒

6.1. Size:96K philips
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BLF3G21-6 UHF power LDMOS transistor Rev. 01 25 June 2008 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical class-AB RF performance IDq = 90 mA; Th = 25 C in a common source test circuit. Mode of operation f PL Gp D IMD3 PL(1dB) (MHz) (W) (dB) (%) (dB) (W) ... See More ⇒

8.1. Size:108K philips
blf3g22-30.pdf pdf_icon

BLF3G22-30 UHF power LDMOS transistor Rev. 01 21 June 2007 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz Table 1. Typical class-AB RF performance IDq = 450 mA; Th = 25 C in a common source test circuit. Mode of operation f1 f2 VDS IDq PL(PEP) PL(AV) Gp D IMD ACPR I... See More ⇒

Detailed specifications: BLF245B , BLF246 , BLF246B , BLF248 , BLF278 , BLF346 , BLF368 , BLF369 , IRF520 , BLF3G21-6 , BLF404 , BLF521 , BLF542 , BLF544 , BLF546 , BLF548 , BLF571 .