BLF3G21-6 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BLF3G21-6

Tipo de FET: LDMOS

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 26 V

|Id|ⓘ - Corriente continua de drenaje: 2.3 A

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.07 Ohm

Encapsulados: SOT538A

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BLF3G21-6 datasheet

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 blf3g21-6.pdf pdf_icon

BLF3G21-6

BLF3G21-6 UHF power LDMOS transistor Rev. 01 25 June 2008 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical class-AB RF performance IDq = 90 mA; Th = 25 C in a common source test circuit. Mode of operation f PL Gp D IMD3 PL(1dB) (MHz) (W) (dB) (%) (dB) (W)

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 blf3g21-30.pdf pdf_icon

BLF3G21-6

BLF3G21-30 UHF power LDMOS transistor Rev. 01 14 February 2007 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz. Table 1. Typical class-AB RF performance IDq = 450 mA; Th = 25 C in a common source test circuit. Mode of operation f PL Gp D IMD3 PL(1dB) (MHz) (W) (dB) (%) (d

 8.1. Size:108K  philips
 blf3g22-30.pdf pdf_icon

BLF3G21-6

BLF3G22-30 UHF power LDMOS transistor Rev. 01 21 June 2007 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz Table 1. Typical class-AB RF performance IDq = 450 mA; Th = 25 C in a common source test circuit. Mode of operation f1 f2 VDS IDq PL(PEP) PL(AV) Gp D IMD ACPR I

Otros transistores... BLF246, BLF246B, BLF248, BLF278, BLF346, BLF368, BLF369, BLF3G21-30, IRF2807, BLF404, BLF521, BLF542, BLF544, BLF546, BLF548, BLF571, BLF573