BLF3G21-6 PDF and Equivalents Search

 

BLF3G21-6 Specs and Replacement

Type Designator: BLF3G21-6

Type of Transistor: LDMOS

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 26 V

|Id| ⓘ - Maximum Drain Current: 2.3 A

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.07 Ohm

Package: SOT538A

BLF3G21-6 substitution

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BLF3G21-6 datasheet

 ..1. Size:96K  philips
blf3g21-6.pdf pdf_icon

BLF3G21-6

BLF3G21-6 UHF power LDMOS transistor Rev. 01 25 June 2008 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical class-AB RF performance IDq = 90 mA; Th = 25 C in a common source test circuit. Mode of operation f PL Gp D IMD3 PL(1dB) (MHz) (W) (dB) (%) (dB) (W) ... See More ⇒

 6.1. Size:99K  philips
blf3g21-30.pdf pdf_icon

BLF3G21-6

BLF3G21-30 UHF power LDMOS transistor Rev. 01 14 February 2007 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz. Table 1. Typical class-AB RF performance IDq = 450 mA; Th = 25 C in a common source test circuit. Mode of operation f PL Gp D IMD3 PL(1dB) (MHz) (W) (dB) (%) (d... See More ⇒

 8.1. Size:108K  philips
blf3g22-30.pdf pdf_icon

BLF3G21-6

BLF3G22-30 UHF power LDMOS transistor Rev. 01 21 June 2007 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz Table 1. Typical class-AB RF performance IDq = 450 mA; Th = 25 C in a common source test circuit. Mode of operation f1 f2 VDS IDq PL(PEP) PL(AV) Gp D IMD ACPR I... See More ⇒

Detailed specifications: BLF246 , BLF246B , BLF248 , BLF278 , BLF346 , BLF368 , BLF369 , BLF3G21-30 , IRF2807 , BLF404 , BLF521 , BLF542 , BLF544 , BLF546 , BLF548 , BLF571 , BLF573 .

History: IXTH14N80

Keywords - BLF3G21-6 MOSFET specs

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