All MOSFET. BLF3G21-6 Datasheet

 

BLF3G21-6 Datasheet and Replacement


   Type Designator: BLF3G21-6
   Type of Transistor: LDMOS
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 26 V
   |Id|ⓘ - Maximum Drain Current: 2.3 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.07 Ohm
   Package: SOT538A
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BLF3G21-6 Datasheet (PDF)

 ..1. Size:96K  philips
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BLF3G21-6

BLF3G21-6UHF power LDMOS transistorRev. 01 25 June 2008 Product data sheet1. Product profile1.1 General description6 W LDMOS power transistor for base station applications at frequencies fromHF to 2200 MHzTable 1. Typical class-AB RF performanceIDq = 90 mA; Th = 25 C in a common source test circuit.Mode of operation f PL Gp D IMD3 PL(1dB)(MHz) (W) (dB) (%) (dB) (W)

 6.1. Size:99K  philips
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BLF3G21-6

BLF3G21-30UHF power LDMOS transistorRev. 01 14 February 2007 Product data sheet1. Product profile1.1 General description30 W LDMOS power transistor for base station applications at frequencies fromHF to 2200 MHz.Table 1. Typical class-AB RF performanceIDq = 450 mA; Th = 25 C in a common source test circuit.Mode of operation f PL Gp D IMD3 PL(1dB)(MHz) (W) (dB) (%) (d

 8.1. Size:108K  philips
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BLF3G21-6

BLF3G22-30UHF power LDMOS transistorRev. 01 21 June 2007 Product data sheet1. Product profile1.1 General description30 W LDMOS power transistor for base station applications at frequencies from2000 MHz to 2200 MHzTable 1. Typical class-AB RF performanceIDq = 450 mA; Th = 25 C in a common source test circuit.Mode of operation f1 f2 VDS IDq PL(PEP) PL(AV) Gp D IMD ACPR I

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: HGD120N10AL | BLF7G21L-160P | AOI4286 | DAMH50N500H | 2SK4198LS | IXFH23N80Q | ELM58822SA

Keywords - BLF3G21-6 MOSFET datasheet

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