BLF3G21-6UHF power LDMOS transistorRev. 01 25 June 2008 Product data sheet1. Product profile1.1 General description6 W LDMOS power transistor for base station applications at frequencies fromHF to 2200 MHzTable 1. Typical class-AB RF performanceIDq = 90 mA; Th = 25 C in a common source test circuit.Mode of operation f PL Gp D IMD3 PL(1dB)(MHz) (W) (dB) (%) (dB) (W)

BLF3G21-30UHF power LDMOS transistorRev. 01 14 February 2007 Product data sheet1. Product profile1.1 General description30 W LDMOS power transistor for base station applications at frequencies fromHF to 2200 MHz.Table 1. Typical class-AB RF performanceIDq = 450 mA; Th = 25 C in a common source test circuit.Mode of operation f PL Gp D IMD3 PL(1dB)(MHz) (W) (dB) (%) (d

BLF3G22-30UHF power LDMOS transistorRev. 01 21 June 2007 Product data sheet1. Product profile1.1 General description30 W LDMOS power transistor for base station applications at frequencies from2000 MHz to 2200 MHzTable 1. Typical class-AB RF performanceIDq = 450 mA; Th = 25 C in a common source test circuit.Mode of operation f1 f2 VDS IDq PL(PEP) PL(AV) Gp D IMD ACPR I