BLF6G10LS-200RN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLF6G10LS-200RN
Tipo de FET: LDMOS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 200 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 28 V
|Id|ⓘ - Corriente continua de drenaje: 49 A
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
Encapsulados: SOT502B
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BLF6G10LS-200RN datasheet
blf6g10-200rn blf6g10ls-200rn.pdf
BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 02 21 January 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) G
blf6g10-160rn blf6g10ls-160rn.pdf
BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) G
blf6g10-135rn blf6g10ls-135rn.pdf
BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 02 21 January 2010 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) G
Otros transistores... BLF6G10-135RN, BLF6G10-160RN, BLF6G10-200RN, BLF6G10-45, BLF6G10L-260PRN, BLF6G10L-40BRN, BLF6G10LS-135RN, BLF6G10LS-160RN, AO4407A, BLF6G10LS-260PRN, BLF6G10S-45, BLF6G13L-250P, BLF6G13LS-250P, BLF6G15L-250PBRN, BLF6G15L-40BRN, BLF6G15L-500H, BLF6G15LS-500H
History: BUK9660-100A
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