BLF6G10LS-200RN - Даташиты. Аналоги. Основные параметры
Наименование производителя: BLF6G10LS-200RN
Тип транзистора: LDMOS
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 200 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 28 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 49 A
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.07 Ohm
Тип корпуса: SOT502B
Аналог (замена) для BLF6G10LS-200RN
BLF6G10LS-200RN Datasheet (PDF)
blf6g10-200rn blf6g10ls-200rn.pdf
BLF6G10-200RN; BLF6G10LS-200RNPower LDMOS transistorRev. 02 21 January 2010 Product data sheet1. Product profile1.1 General description200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) G
blf6g10-160rn blf6g10ls-160rn.pdf
BLF6G10-160RN; BLF6G10LS-160RNPower LDMOS transistorRev. 02 21 January 2010 Product data sheet1. Product profile1.1 General description160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) G
blf6g10-135rn blf6g10ls-135rn.pdf
BLF6G10-135RN; BLF6G10LS-135RNPower LDMOS transistorRev. 02 21 January 2010 Product data sheet1. Product profile1.1 General description135 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) G
Другие MOSFET... BLF6G10-135RN , BLF6G10-160RN , BLF6G10-200RN , BLF6G10-45 , BLF6G10L-260PRN , BLF6G10L-40BRN , BLF6G10LS-135RN , BLF6G10LS-160RN , BS170 , BLF6G10LS-260PRN , BLF6G10S-45 , BLF6G13L-250P , BLF6G13LS-250P , BLF6G15L-250PBRN , BLF6G15L-40BRN , BLF6G15L-500H , BLF6G15LS-500H .
Список транзисторов
Обновления
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