BLF6G10LS-200RN Datasheet and Replacement. Cross Reference Search

BLF6G10LS-200RN Datasheet (PDF)

0.1. Size:161K philips
blf6g10-200rn blf6g10ls-200rn.pdf pdf_icon

BLF6G10-200RN; BLF6G10LS-200RNPower LDMOS transistorRev. 02 21 January 2010 Product data sheet1. Product profile1.1 General description200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) G

4.1. Size:154K philips
blf6g10-160rn blf6g10ls-160rn.pdf pdf_icon

BLF6G10-160RN; BLF6G10LS-160RNPower LDMOS transistorRev. 02 21 January 2010 Product data sheet1. Product profile1.1 General description160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) G

4.2. Size:145K philips
blf6g10-135rn blf6g10ls-135rn.pdf pdf_icon

BLF6G10-135RN; BLF6G10LS-135RNPower LDMOS transistorRev. 02 21 January 2010 Product data sheet1. Product profile1.1 General description135 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) G

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