BLF6G15L-250PBRN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BLF6G15L-250PBRN
   Tipo de FET: LDMOS
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 250 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 28 V
   |Id|ⓘ - Corriente continua de drenaje: 64 A

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.4 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: SOT1110A

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BLF6G15L-250PBRN Datasheet (PDF)

0.1. Size:311K nxp
blf6g15l-250pbrn.pdf

BLF6G15L-250PBRNPower LDMOS transistorRev. 2 3 November 2010 Product data sheet1. Product profile1.1 General description250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR (MH

5.1. Size:288K philips
blf6g15l-40brn.pdf

BLF6G15L-40BRNPower LDMOS transistorRev. 2 12 November 2010 Product data sheet1. Product profile1.1 General description40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR (MHz)

5.2. Size:696K nxp
blf6g15l-500h 6g15ls-500h.pdf

BLF6G15L-500H; BLF6G15LS-500HPower LDMOS transistorRev. 3 12 July 2013 Product data sheet1. Product profile1.1 General descriptionA 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W average DVB-T at 1.5 GHz. The excellent ruggedness of this device makes it ideal

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