BLF6G15L-250PBRN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLF6G15L-250PBRN
Tipo de FET: LDMOS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 250 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 28 V
|Id|ⓘ - Corriente continua de drenaje: 64 A
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Encapsulados: SOT1110A
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BLF6G15L-250PBRN datasheet
blf6g15l-250pbrn.pdf
BLF6G15L-250PBRN Power LDMOS transistor Rev. 2 3 November 2010 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR (MH
blf6g15l-40brn.pdf
BLF6G15L-40BRN Power LDMOS transistor Rev. 2 12 November 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR (MHz)
blf6g15l-500h 6g15ls-500h.pdf
BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 3 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W average DVB-T at 1.5 GHz. The excellent ruggedness of this device makes it ideal
Otros transistores... BLF6G10L-40BRN, BLF6G10LS-135RN, BLF6G10LS-160RN, BLF6G10LS-200RN, BLF6G10LS-260PRN, BLF6G10S-45, BLF6G13L-250P, BLF6G13LS-250P, IRFZ44N, BLF6G15L-40BRN, BLF6G15L-500H, BLF6G15LS-500H, BLF6G20-110, BLF6G20-180PN, BLF6G20-180RN, BLF6G20-230PRN, BLF6G20-40
History: FQAF9N50
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