BLF6G15L-250PBRN Datasheet and Replacement
Type Designator: BLF6G15L-250PBRN
Type of Transistor: LDMOS
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 28 V
|Id| ⓘ - Maximum Drain Current: 64 A
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SOT1110A
BLF6G15L-250PBRN substitution
BLF6G15L-250PBRN Datasheet (PDF)
blf6g15l-250pbrn.pdf

BLF6G15L-250PBRNPower LDMOS transistorRev. 2 3 November 2010 Product data sheet1. Product profile1.1 General description250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR (MH
blf6g15l-40brn.pdf

BLF6G15L-40BRNPower LDMOS transistorRev. 2 12 November 2010 Product data sheet1. Product profile1.1 General description40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR (MHz)
blf6g15l-500h 6g15ls-500h.pdf

BLF6G15L-500H; BLF6G15LS-500HPower LDMOS transistorRev. 3 12 July 2013 Product data sheet1. Product profile1.1 General descriptionA 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W average DVB-T at 1.5 GHz. The excellent ruggedness of this device makes it ideal
Datasheet: BLF6G10L-40BRN , BLF6G10LS-135RN , BLF6G10LS-160RN , BLF6G10LS-200RN , BLF6G10LS-260PRN , BLF6G10S-45 , BLF6G13L-250P , BLF6G13LS-250P , IRFZ44N , BLF6G15L-40BRN , BLF6G15L-500H , BLF6G15LS-500H , BLF6G20-110 , BLF6G20-180PN , BLF6G20-180RN , BLF6G20-230PRN , BLF6G20-40 .
Keywords - BLF6G15L-250PBRN MOSFET datasheet
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