All MOSFET. BLF6G15L-250PBRN Datasheet

 

BLF6G15L-250PBRN Datasheet and Replacement


   Type Designator: BLF6G15L-250PBRN
   Type of Transistor: LDMOS
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 28 V
   |Id|ⓘ - Maximum Drain Current: 64 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT1110A
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BLF6G15L-250PBRN Datasheet (PDF)

 0.1. Size:311K  nxp
blf6g15l-250pbrn.pdf pdf_icon

BLF6G15L-250PBRN

BLF6G15L-250PBRNPower LDMOS transistorRev. 2 3 November 2010 Product data sheet1. Product profile1.1 General description250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR (MH

 5.1. Size:288K  philips
blf6g15l-40brn.pdf pdf_icon

BLF6G15L-250PBRN

BLF6G15L-40BRNPower LDMOS transistorRev. 2 12 November 2010 Product data sheet1. Product profile1.1 General description40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR (MHz)

 5.2. Size:696K  nxp
blf6g15l-500h 6g15ls-500h.pdf pdf_icon

BLF6G15L-250PBRN

BLF6G15L-500H; BLF6G15LS-500HPower LDMOS transistorRev. 3 12 July 2013 Product data sheet1. Product profile1.1 General descriptionA 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W average DVB-T at 1.5 GHz. The excellent ruggedness of this device makes it ideal

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TK2P60D | IRFBG20

Keywords - BLF6G15L-250PBRN MOSFET datasheet

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