Справочник MOSFET. BLF6G15L-250PBRN

 

BLF6G15L-250PBRN MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BLF6G15L-250PBRN
   Тип транзистора: LDMOS
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 250 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 28 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 64 A
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: SOT1110A

 Аналог (замена) для BLF6G15L-250PBRN

 

 

BLF6G15L-250PBRN Datasheet (PDF)

 0.1. Size:311K  nxp
blf6g15l-250pbrn.pdf

BLF6G15L-250PBRN
BLF6G15L-250PBRN

BLF6G15L-250PBRNPower LDMOS transistorRev. 2 3 November 2010 Product data sheet1. Product profile1.1 General description250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR (MH

 5.1. Size:288K  philips
blf6g15l-40brn.pdf

BLF6G15L-250PBRN
BLF6G15L-250PBRN

BLF6G15L-40BRNPower LDMOS transistorRev. 2 12 November 2010 Product data sheet1. Product profile1.1 General description40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR (MHz)

 5.2. Size:696K  nxp
blf6g15l-500h 6g15ls-500h.pdf

BLF6G15L-250PBRN
BLF6G15L-250PBRN

BLF6G15L-500H; BLF6G15LS-500HPower LDMOS transistorRev. 3 12 July 2013 Product data sheet1. Product profile1.1 General descriptionA 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W average DVB-T at 1.5 GHz. The excellent ruggedness of this device makes it ideal

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