BLL1214-35 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLL1214-35
Tipo de FET: LDMOS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 110 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 36 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
Paquete / Cubierta: SOT467C
Búsqueda de reemplazo de BLL1214-35 MOSFET
BLL1214-35 Datasheet (PDF)
bll1214-35.pdf

DISCRETE SEMICONDUCTORSDATA SHEETM3D381BLL1214-35L-band radar LDMOS drivertransistorProduct specification 2002 Sep 27Philips Semiconductors Product specificationL-band radar LDMOS driver transistor BLL1214-35FEATURES PINNING - SOT467C High power gainPIN DESCRIPTION Easy power control1 drain Excellent ruggedness2 gate Source on mounting base eliminate
bll1214-250r.pdf

BLL1214-250RLDMOS L-band radar power transistorRev. 01 4 February 2010 Product data sheet1. Product profile1.1 General descriptionSilicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange.Table 1. Test informationTypical RF performance at Th =25C; tp = 1 ms
bll1214-250.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D379BLL1214-250L-band radar LDMOS transistorProduct specification 2003 Aug 29Supersedes data of 2002 Aug 06Philips Semiconductors Product specificationL-band radar LDMOS transistor BLL1214-250FEATURES PINNING - SOT502A High power gainPIN DESCRIPTION Easy power control1 drain Excellent ruggedness2 gate
Otros transistores... BLF888A , BLF888AS , BLF888B , BLF888BS , BLF8G10L-160 , BLF8G10LS-160 , BLL1214-250 , BLL1214-250R , IRFP460 , BLL6H0514-25 , BLL6H0514L-130 , BLL6H0514LS-130 , BLL6H1214-500 , BLL6H1214L-250 , BLL6H1214LS-250 , BLM6G10-30 , BLM6G10-30G .
History: STW13NK100Z | PNM8P30V12 | BSP230
History: STW13NK100Z | PNM8P30V12 | BSP230



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
2n3904 equivalent | ksa1220 | s9015 | mje3055t datasheet | a733 | irf9630 | mj2955 | mje15030