BLL1214-35 LDMOS Datasheet: N-Ch, 36V, 10A. Full specification with pinout and replacement list

BLL1214-35 Specs and Replacement

Type Designator: BLL1214-35

Type of Transistor: LDMOS

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 36 V

|Id| ⓘ - Maximum Drain Current: 10 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: SOT467C

BLL1214-35 substitution

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BLL1214-35 datasheet

..1. Size:64K philips
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DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLL1214-35 L-band radar LDMOS driver transistor Product specification 2002 Sep 27 Philips Semiconductors Product specification L-band radar LDMOS driver transistor BLL1214-35 FEATURES PINNING - SOT467C High power gain PIN DESCRIPTION Easy power control 1 drain Excellent ruggedness 2 gate Source on mounting base eliminate... See More ⇒

6.1. Size:133K philips
bll1214-250r.pdf pdf_icon

BLL1214-250R LDMOS L-band radar power transistor Rev. 01 4 February 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange. Table 1. Test information Typical RF performance at Th =25 C; tp = 1 ms... See More ⇒

6.2. Size:79K philips
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