BLL1214-35 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: BLL1214-35
Тип транзистора: LDMOS
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 110 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 36 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.3 Ohm
Тип корпуса: SOT467C
- подбор MOSFET транзистора по параметрам
BLL1214-35 Datasheet (PDF)
bll1214-35.pdf

DISCRETE SEMICONDUCTORSDATA SHEETM3D381BLL1214-35L-band radar LDMOS drivertransistorProduct specification 2002 Sep 27Philips Semiconductors Product specificationL-band radar LDMOS driver transistor BLL1214-35FEATURES PINNING - SOT467C High power gainPIN DESCRIPTION Easy power control1 drain Excellent ruggedness2 gate Source on mounting base eliminate
bll1214-250r.pdf

BLL1214-250RLDMOS L-band radar power transistorRev. 01 4 February 2010 Product data sheet1. Product profile1.1 General descriptionSilicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange.Table 1. Test informationTypical RF performance at Th =25C; tp = 1 ms
bll1214-250.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D379BLL1214-250L-band radar LDMOS transistorProduct specification 2003 Aug 29Supersedes data of 2002 Aug 06Philips Semiconductors Product specificationL-band radar LDMOS transistor BLL1214-250FEATURES PINNING - SOT502A High power gainPIN DESCRIPTION Easy power control1 drain Excellent ruggedness2 gate
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 2SJ438 | PHB38N02LT | 2SK2525-01 | AP55T10GH-HF | MTB1D7N03ATH8 | 2SK610 | KRF4905S
History: 2SJ438 | PHB38N02LT | 2SK2525-01 | AP55T10GH-HF | MTB1D7N03ATH8 | 2SK610 | KRF4905S



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