BLM6G10-30G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLM6G10-30G
Tipo de FET: LDMOS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 28 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
CARACTERÍSTICAS ELÉCTRICAS
Paquete / Cubierta: SOT822-1
- Selección de transistores por parámetros
BLM6G10-30G Datasheet (PDF)
blm6g10-30 blm6g10-30g.pdf

BLM6G10-30; BLM6G10-30GW-CDMA 860 MHz - 960 MHz power MMICRev. 2 1 March 2011 Product data sheet1. Product profile1.1 General description30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 860 MHz to 960 MHz. Available in Gull Wing for surface mount (SOT822-1) or flat lead (SOT834-1).Table 1. Application informationTypical RF performance at Th =
blm6g22-30 blm6g22-30g.pdf

BLM6G22-30; BLM6G22-30GW-CDMA 2100 MHz to 2200 MHz power MMICRev. 4 7 March 2011 Product data sheet1. Product profile1.1 General description30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz. Available in gull wing for surface mount (SOT822-1) or flat lead (SOT834-1).Table 1. Typical performanceTypical RF performance at Th
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: BLP042N10G-P | FQA5N90
History: BLP042N10G-P | FQA5N90



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