BLM6G10-30G Todos los transistores

 

BLM6G10-30G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BLM6G10-30G
   Tipo de FET: LDMOS
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 28 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A

CARACTERÍSTICAS ELÉCTRICAS


   Paquete / Cubierta: SOT822-1
 
   - Selección ⓘ de transistores por parámetros

 

BLM6G10-30G Datasheet (PDF)

 ..1. Size:681K  philips
 blm6g10-30 blm6g10-30g.pdf pdf_icon

BLM6G10-30G

BLM6G10-30; BLM6G10-30GW-CDMA 860 MHz - 960 MHz power MMICRev. 2 1 March 2011 Product data sheet1. Product profile1.1 General description30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 860 MHz to 960 MHz. Available in Gull Wing for surface mount (SOT822-1) or flat lead (SOT834-1).Table 1. Application informationTypical RF performance at Th =

 9.1. Size:154K  philips
 blm6g22-30 blm6g22-30g.pdf pdf_icon

BLM6G10-30G

BLM6G22-30; BLM6G22-30GW-CDMA 2100 MHz to 2200 MHz power MMICRev. 4 7 March 2011 Product data sheet1. Product profile1.1 General description30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz. Available in gull wing for surface mount (SOT822-1) or flat lead (SOT834-1).Table 1. Typical performanceTypical RF performance at Th

Otros transistores... BLL1214-35 , BLL6H0514-25 , BLL6H0514L-130 , BLL6H0514LS-130 , BLL6H1214-500 , BLL6H1214L-250 , BLL6H1214LS-250 , BLM6G10-30 , P55NF06 , BLM6G22-30 , BLM6G22-30G , 2SK1745 , 2SK60 , 2SJ238 , BLS2933-100 , BLS6G2731-120 , BLS6G2731-6G .

History: AON6816 | DMJ70H1D0SV3

 

 
Back to Top

 


 
.