BLM6G10-30G Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: BLM6G10-30G
Тип транзистора: LDMOS
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 30 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 28 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A
Тип корпуса: SOT822-1
Аналог (замена) для BLM6G10-30G
BLM6G10-30G Datasheet (PDF)
blm6g10-30 blm6g10-30g.pdf

BLM6G10-30; BLM6G10-30GW-CDMA 860 MHz - 960 MHz power MMICRev. 2 1 March 2011 Product data sheet1. Product profile1.1 General description30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 860 MHz to 960 MHz. Available in Gull Wing for surface mount (SOT822-1) or flat lead (SOT834-1).Table 1. Application informationTypical RF performance at Th =
blm6g22-30 blm6g22-30g.pdf

BLM6G22-30; BLM6G22-30GW-CDMA 2100 MHz to 2200 MHz power MMICRev. 4 7 March 2011 Product data sheet1. Product profile1.1 General description30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz. Available in gull wing for surface mount (SOT822-1) or flat lead (SOT834-1).Table 1. Typical performanceTypical RF performance at Th
Другие MOSFET... BLL1214-35 , BLL6H0514-25 , BLL6H0514L-130 , BLL6H0514LS-130 , BLL6H1214-500 , BLL6H1214L-250 , BLL6H1214LS-250 , BLM6G10-30 , P55NF06 , BLM6G22-30 , BLM6G22-30G , 2SK1745 , 2SK60 , 2SJ238 , BLS2933-100 , BLS6G2731-120 , BLS6G2731-6G .
History: AFN3310W | 2SK3203 | BLL1214-35 | CEP740G | CEP03N8 | CEB13N10L | HY4306P
History: AFN3310W | 2SK3203 | BLL1214-35 | CEP740G | CEP03N8 | CEB13N10L | HY4306P



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