All MOSFET. BLM6G10-30G Datasheet

 

BLM6G10-30G Datasheet and Replacement


   Type Designator: BLM6G10-30G
   Type of Transistor: LDMOS
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 28 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Package: SOT822-1
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BLM6G10-30G Datasheet (PDF)

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BLM6G10-30G

BLM6G10-30; BLM6G10-30GW-CDMA 860 MHz - 960 MHz power MMICRev. 2 1 March 2011 Product data sheet1. Product profile1.1 General description30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 860 MHz to 960 MHz. Available in Gull Wing for surface mount (SOT822-1) or flat lead (SOT834-1).Table 1. Application informationTypical RF performance at Th =

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BLM6G10-30G

BLM6G22-30; BLM6G22-30GW-CDMA 2100 MHz to 2200 MHz power MMICRev. 4 7 March 2011 Product data sheet1. Product profile1.1 General description30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz. Available in gull wing for surface mount (SOT822-1) or flat lead (SOT834-1).Table 1. Typical performanceTypical RF performance at Th

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History: VBNC1303 | IRFS4010PBF

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