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BSH105 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSH105
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.417 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 1.05 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
   Paquete / Cubierta: TO236AB
 

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BSH105 Datasheet (PDF)

 ..1. Size:110K  philips
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BSH105

Philips Semiconductors Product specification N-channel enhancement mode BSH105 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage d VDS = 20 V Fast switching Logic level compatible ID = 1.05 A Subminiature surface mountpackage RDS(ON) 250 m (VGS = 2.5 V)gVGS(TO) 0.4 VsGENERAL DESCRIPTION PINNING SOT23N-channel, enhancem

 ..2. Size:225K  nxp
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BSH105

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 ..3. Size:35K  tysemi
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BSH105

Product specification N-channel enhancement mode BSH105 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage d VDS = 20 V Fast switching Logic level compatible ID = 1.05 A Subminiature surface mountpackage RDS(ON) 250 m (VGS = 2.5 V)gVGS(TO) 0.4 VsGENERAL DESCRIPTION PINNING SOT23N-channel, enhancement mode, PIN DESCRIPTI

 ..4. Size:1517K  kexin
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BSH105

SMD Type MOSFETN-Channel MOSFETBSH105 (KSH105)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 1.05 A (VGS = 10V)1 2 RDS(ON) 200m (VGS = 4.5V)+0.1+0.050.95 -0.1 0.1 -0.01 RDS(ON) 250m (VGS = 2.5V)1.9+0.1-0.1 RDS(ON) 300m (VGS = 1.8V)D1. Gate2. Source3. DrainGS Absolute Maximum R

Otros transistores... BLS7G2325L-105 , BLS7G2729L-350P , BLS7G2729LS-350P , BLS7G2933S-150 , BLS7G3135L-350P , BLS7G3135LS-350P , 2SK3408 , BSH103 , 4435 , BSH108 , BSH111 , BSH114 , BSH121 , BSH201 , BSH202 , BSH203 , BSH205 .

History: 2SJ661-DL-E

 

 
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