BSH105 Todos los transistores

 

BSH105 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSH105

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.417 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 1.05 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm

Encapsulados: TO236AB

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BSH105 datasheet

 ..1. Size:110K  philips
bsh105 3.pdf pdf_icon

BSH105

Philips Semiconductors Product specification N-channel enhancement mode BSH105 MOS transistor FEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage d VDS = 20 V Fast switching Logic level compatible ID = 1.05 A Subminiature surface mount package RDS(ON) 250 m (VGS = 2.5 V) g VGS(TO) 0.4 V s GENERAL DESCRIPTION PINNING SOT23 N-channel, enhancem

 ..2. Size:225K  nxp
bsh105.pdf pdf_icon

BSH105

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 ..3. Size:35K  tysemi
bsh105.pdf pdf_icon

BSH105

Product specification N-channel enhancement mode BSH105 MOS transistor FEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage d VDS = 20 V Fast switching Logic level compatible ID = 1.05 A Subminiature surface mount package RDS(ON) 250 m (VGS = 2.5 V) g VGS(TO) 0.4 V s GENERAL DESCRIPTION PINNING SOT23 N-channel, enhancement mode, PIN DESCRIPTI

 ..4. Size:1517K  kexin
bsh105.pdf pdf_icon

BSH105

SMD Type MOSFET N-Channel MOSFET BSH105 (KSH105) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 20V ID = 1.05 A (VGS = 10V) 1 2 RDS(ON) 200m (VGS = 4.5V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 RDS(ON) 250m (VGS = 2.5V) 1.9+0.1 -0.1 RDS(ON) 300m (VGS = 1.8V) D 1. Gate 2. Source 3. Drain G S Absolute Maximum R

Otros transistores... BLS7G2325L-105 , BLS7G2729L-350P , BLS7G2729LS-350P , BLS7G2933S-150 , BLS7G3135L-350P , BLS7G3135LS-350P , 2SK3408 , BSH103 , 5N65 , BSH108 , BSH111 , BSH114 , BSH121 , BSH201 , BSH202 , BSH203 , BSH205 .

 

 

 


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